PDF MMBT4403L Data sheet ( Hoja de datos )

Número de pieza	MMBT4403L
Descripción	Switching Transistor
Fabricantes	ON Semiconductor
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No Preview Available ! MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Collector Current − Peak THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IC ICM Value −40 −40 −5.0 −600 −900 Unit Vdc Vdc Vdc mAdc mAdc Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C Symbol Max Unit PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Transient pulses must not cause the junction temperature to be exceeded. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. www.onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM 2T M G G 1 2T = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Specific Device Code, Date Code or overbar orientation and/or location may vary depend- ing upon manufacturing location. This is a representation only and actual devices may not match this drawing exactly. ORDERING INFORMATION Device Package Shipping† MMBT4403LT1G SOT−23 3000 / Tape & Reel (Pb−Free) SMMBT4403LT1G SOT−23 3000 / Tape & Reel (Pb−Free) MMBT4403LT3G SOT−23 10,000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 13 1 Publication Order Number: MMBT4403LT1/D 1 page 450 400 350 TJ = 150°C 300 250 25°C 200 150 100 - 55°C 50 0.0001 MMBT4403L, SMMBT4403L STATIC CHARACTERISTICS VCE = 5.0 V VCE = 2.0 V VCE = 1.0 V 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 12. DC Current Gain 0.1 1 1.2 IC = 1.0 mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 10 mA 100 mA 500 mA 0.1 1 Ib, BASE CURRENT (mA) Figure 13. Collector Saturation Region 10 100 0.35 IC/IB = 10 0.30 0.25 150°C 0.20 0.15 25°C 0.10 -55°C 0.05 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 14. Collector−Emitter Saturation Voltage vs. Collector Current 1 0.5 0 qVC for VCE(sat) 0.5 1.0 1.5 2.0 qVS for VBE 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) Figure 15. Temperature Coefficients www.onsemi.com 5 5 Page

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