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Número de pieza | MD5000A | |
Descripción | DUAL AMPLIFIED TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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No Preview Available ! MD5000,A,B
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
Value
vCEO
vCBO
v EBO
ic
15
20
5.0
50
One Side
Both
Sides
PD 300 400
1.7 2.3
TJ. Tstg
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°c
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Ic = 3.0 mAdc, \q = 0)
Collector-Base Breakdown Voltage (Ic = 10 fiAdc, lg = 0)
Emitter-Base Breakdown Voltage fig = 10 juAdc, Ic = 0)
Collector Cutoff Current
ON CHARACTERISTICS
(Vcb = 15 Vdc, Ie = 0)
(VC B = 15 Vdc, El = 0, TA = 150°C)
V(BR)CEO
V(BR)CBO
V(BR)EBO
!CBO
DC Current Gain (Ic = 3.0 mAdc, Vce = 1-0 Vdc)
Collector-Emitter Saturation Voltage (Ic = 10 mAdc, Ib = 1.0 mAdc)
Base-Emitter Saturation Voltage (Ic = 10 mAdc, Iq = 1.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(rc = 4.0 mAdc, Vce = 10 Vdc, f = 100 MHz)
Output Capacitance
(VC b = 10 Vdc, l£ = 0. f = 140 kHz)
Input Capacitance
(V BE = 0.5 Vdc, Ic = 0, f = 140 kHz)
Noise Figure
dC = 1.0 mAdc, Vce = 6.0 Vdc, f = 60 MHz, R$ = 400 ohms)
FUNCTIONAL TEST
h FE
VCE(sat)
VBE(sat)
*T
C bo
Cjbo
NF
Amplifier Power Gain
dC = 6.0 mAdc, Vcb = 12 Vdc, R G = R L = 50 ohms, f = 200 MHz)
MATCHING CHARACTERISTICS
G pe
DC Current Gain RatioO)
dC = 4.0 mAdc, Vce = 10 Vdc)
MD5000
MD5000A
MD5000B
hFEVh FE2
Base-Emitter Voltage Differential
c(l = 4.0 mAdc, Vce = 10 Vdc)
MD5000
MD5000A
MD5000B
IVBE1-VBE2I
Base-Emitter Voltage Differential Gradient
:-. dc = 4.0 mAdc, VCE = 10 Vdc, TA = -55 to + 125°C)
*'
MD5000
MD5000A
MD5000B
A(V BE 1-V BE 2>
ATA
(1) The lowest hpE reading is taken as hpE 1 for this ratio.
CASE 654-07, STYLE 1
DUAL
AMPLIFIED TRANSISTOR
PNP SIUCON
Refer to 2N3307 for graphs.
Min Typ
—15
—20
—5.0
'
_
20 50
——
--
600 900
——
——
— 3.0
Max
—
—
—
0.010
1.0
—
0.4
1.0
—
1.7
2.0
6.0
Unit
Vdc
Vdc
Vdc
/xAdc
—
Vdc
Vdc
MHz
pF
pF
dB
-15 20
dB
0.7
0.9 1.0
0.8 1.0
rhVdc
- 5.0
5.0
10
mV/°C
- 10
10
20
5-71
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet MD5000A.PDF ] |
Número de pieza | Descripción | Fabricantes |
MD5000 | 50A MOTOROLA TYPE PRESS-FIT DIODE | WON-TOP |
MD5000 | Dual PNP Silicon Transistor | ON Semiconductor |
MD5000 | DUAL AMPLIFIED TRANSISTOR | Motorola Semiconductors |
MD5000A | Dual PNP Silicon Transistor | ON Semiconductor |
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