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Número de pieza | BSX29 | |
Descripción | PNP SILICON SWITCHING TRANSISTOR | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BSX29 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Tc = 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
2.06
PD
Tj, T s tg
Symbol
Rejc
p>6»ja
Value
12
12
5
200
.36
1.2
0.686
6.86
-65 to +200
Max
146
486
Unit
Vdc
Vdc
Vdc
Amp
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC= 10mA)(1)
Collector-Emitter Breakdown Voltage
dC= 10 (iA)
Collector-Base Breakdown Voltage
dc = 10uA)
Emitter-Base Breakdown Voltage
(IE = 100 uA)
Collector Cutoff Current
(V C E = 6 V, V B E = 0)
(VCE = 6 V, VBE = 0, Ta = 85°C)
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
dC = 10 mA, Ib = 1 mA)
dC = 30 mA, Ib = 3 mA)
(IC = 100 mA, Ib = 10 mA)
Emitter-Base Saturation Voltage
dC = 10 mA, Ib = 1 mA)
dC = 30 mA, IB = 3 mA)
(IC = 100 mA, Ib = 10 mA)
DC Current Gain
dC = 10 mA, VCE = 0.3 V)(1)
(IC = 30 mA, VCE = 0.5 V)(1)
dC = 100 mA, VcE = 1 V)(1)
Collector-Emitter Saturation Voltage
(IC = 30 mA, Ib = 3 mA, Ta = 85°C)
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
(IC = 30 mA, VCE = 1 V, f = 1 00 MHz)
Output Capacitance
(V C B = 5 V)
Input Capacitance
(V E B = 0.5 V)
Turn On Time
(IC = 30 mA, lB1 = 1.5 mA)
Turn Off Time
(IC = 30 mA, Ib 1 = lB2 = 1-5 mA)
' Pulsed: Pulse Duration = 300 us, Duty Cycle = 1%.
BSX29
CASE 22-03, STYLE 1
TOMS (TO-206AA)
SWITCHING TRANSISTOR
PIMP SILICON
Refer to 2N869A for graphs.
Symbol Min
V(BR)CE0
V(BR)CES
V(BR)CB0
V(BR)EB0
ices
12
12
12
4
VCE(sat)
VBE(sat)
0.78
0.85
hFE
VCE(sat)
25
30
20
hfe
Cob
Cib
ton
toff
4
Max
80
5
0.15
0.2
0.5
0.98
1.2
1.7
120
0.4
6
6
60
90
Unit
J
V
V
V
V
nA
uA
V
V
V
PF
PF
ns
ns
4-247
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet BSX29.PDF ] |
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