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Datasheet 1N6339 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6339 | 500mW GLASS ZENER DIODES DIGITRON SEMICONDUCTORS
1N6309 – 1N6355D
500 mW GLASS ZENER DIODES
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Junction and storage temperature range
TJ, Tstg
-65 to +175
°C
Thermal resistance, junction to lead(1)
1N6309-1N6320
1N6321-1N6355
RӨJL
150 95.5
°C/W
Thermal resistance, ju |  Digitron Semiconductors | diode |
| 2 | 1N6339 | Small Signal Zener Diodes ES Components
1N6309 – 1N6345 Family Bare Die
DATA SHEET
Small Signal Zener Diodes
Wire Bondable, Epoxy Attach Bare Die
Rev: B
FEATURES
• Wafer fab by Vishay Semiconductor • Silicon planar Zener diode
MECHANICAL DATA
Top Metal ( Anode )
Back Metal ( Cathode )
Passivation
AlSi AuSb Nitri |  ES Components | diode |
| 3 | 1N6339 | Zener Voltage Regulator Zener Voltage Regulator Series
1N6321 thru 1N6349
Features
• JAN, JANTX, JANTXV and JANS available per MIL-PRF-19500/533 • Voidless hermetically sealed glass package • Triple-layer passivation • Internal "Category I” Metallurgical bonds for 1N6320
thru 1N6349 • Surface mount equivalents |  Aeroflex | regulator |
| 4 | 1N6339 | ZENER 500mW VOLTAGE REGULATOR SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 5102, REV. B.3
1N6324/US thru 1N6351/US StandZaErNd ER 500mW VOLTAGE
REGULATOR
AVAILABLE AS 1N, JAN, JANTX, JANTXV
JANS JAN EQUIVALENT* SJ*, SX*, SV*, SS*
500mW Zener
Qualified per MIL-PRF-19500/533
DESCRIPTION: This voidless hermetically sealed ze |  SENSITRON SEMICONDUCTOR | regulator |
| 5 | 1N6339 | 500mW GLASS ZENER DIODES 1N6309 thru 1N6355D
Available on commercial
versions
VOIDLESS HERMETICALLY SEALED 500mW GLASS ZENER DIODES
Qualified per MIL-PRF-19500/533
DESCRIPTION
This Zener voltage regulator series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. Thes |  Microsemi | diode |
| 6 | 1N6339C | 500mW GLASS ZENER DIODES 1N6309 thru 1N6355D
Available on commercial
versions
VOIDLESS HERMETICALLY SEALED 500mW GLASS ZENER DIODES
Qualified per MIL-PRF-19500/533
DESCRIPTION
This Zener voltage regulator series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. Thes | Microsemi | diode |
| 7 | 1N6339D | 500mW GLASS ZENER DIODES 1N6309 thru 1N6355D
Available on commercial
versions
VOIDLESS HERMETICALLY SEALED 500mW GLASS ZENER DIODES
Qualified per MIL-PRF-19500/533
DESCRIPTION
This Zener voltage regulator series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. Thes | Microsemi | diode |
| 8 | 1N6339US | ZENER 500mW VOLTAGE REGULATOR SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 5102, REV. B.3
1N6324/US thru 1N6351/US StandZaErNd ER 500mW VOLTAGE
REGULATOR
AVAILABLE AS 1N, JAN, JANTX, JANTXV
JANS JAN EQUIVALENT* SJ*, SX*, SV*, SS*
500mW Zener
Qualified per MIL-PRF-19500/533
DESCRIPTION: This voidless hermetically sealed ze | SENSITRON SEMICONDUCTOR | regulator |
| 9 | 1N6339US | VOIDLESS-HERMETICALLY-SEALED Surface Mount
1N6309US thru 1N6355US VOIDLESS-HERMETICALLY-SEALED Surface Mount 500 mW Glass Zener Diodes
SCOTTSDALE DIVISION
DESCRIPTION
This Zener Voltage Regulator series is military qualified to MIL-PRF19500/533 and is ideal for high-reliability applications where a failure cannot be to |  Microsemi Corporation | diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | | |
| 8 | 1N60 | N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 1N60
1.2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This powe  Unisonic Technologies mosfet | | |
| 9 | 1N60 | SMALL SIGNAL SCHOTTKY DIODE BL
FEATURES
GALAXY ELECTRICAL
VOLTAGE RANGE: 40 V CURRENT: 0.03 A
1N 6 0
SMALL SIGNAL SCHOTTKY DIODE
Metal s illicon junction m ajority carrier conduction High current capability,low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics Sm all tem perat  BL diode | |
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