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Datasheet BCX71G Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BCX71GPNP Silicon AF Transistors

PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW60, BCX70 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCW6
Infineon
Infineon
transistor
2BCX71GSILICON PNP TRANSISTORS

BCX71 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX71 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching
Central Semiconductor
Central Semiconductor
transistor
3BCX71GSILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX71G BCX71H BCX71J BCX71K SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCX71G = BG BCX71H = BH BCX71J = BJ BCX71K = BK PACKAGE OUTLINE DETAILS ALL
CDIL
CDIL
transistor
4BCX71GGeneral Purpose Transistor

SMD Type TransistIoCrs General Purpose Transistor BCX71G Features PNP Epitaxial Silicon Transistor +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-b
Kexin
Kexin
transistor
5BCX71GGENERAL PURPOSE TRANSISTOR

BCX71G,H,J,K MAXIMUM RATINGS CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous THERMAL CHARACTERISTICS Symbol vCEO VCBO v EBO 'C Characteristic •Total
Motorola Semiconductors
Motorola Semiconductors
transistor
6BCX71GPNP EPITAXIAL SILICON TRANSISTOR

Samsung semiconductor
Samsung semiconductor
transistor
7BCX71GPNP EPITAXIAL SILICON TRANSISTOR

BCX71G GENERAL PURPOSE TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature • Refer to KS5086 for graphs Symbol VCB
Fairchild Semiconductor
Fairchild Semiconductor
transistor
8BCX71GPNP general purpose transistors

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCX71 series PNP general purpose transistors Product specification Supersedes data of 1997 Apr 18 1999 Apr 20 Philips Semiconductors Product specification PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low vol
NXP Semiconductors
NXP Semiconductors
transistor
9BCX71GPNP Silicon AF Transistors (For AF input stages and driver applications High current gain)

PNP Silicon AF Transistors BCW 61 BCX 71 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 (NPN) Type BCW 61 A BCW 61 B BCW 61 C BCW 61 D BCW 61 FF BCW 61 FN BCX
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor


BCX Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BCX12NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage)

NPN Silicon AF Switching Transistor For general AF applications q High breakdown voltage q Low collector-emitter saturation voltage q Complementary type: BCX 13 (PNP) q 2 BCX 12 3 1 Type BCX 12 Marking BCX 12 Ordering Code Q62702-C25 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Rati
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
2BCX13PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage)

PNP Silicon AF Switching Transistor For general AF applications q High breakdown voltage q Low collector-emitter saturation voltage q Complementary type: BCX 12 (NPN) q 2 1 3 BCX 13 Type BCX 13 Marking BCX 13 Ordering Code Q62702-C26 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratin
Siemens Semiconductor Group
Siemens Semiconductor Group
transistor
3BCX13Trans GP BJT PNP 125V 0.8A

New Jersey Semiconductor
New Jersey Semiconductor
data
4BCX17GENERAL PURPOSE TRANSISTOR

BCX17,18 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO vEBO Value BCX17 BCX18 45 25 50 30 5.0 500 Unit Vdc Vdc THER
Motorola Semiconductors
Motorola Semiconductors
transistor
5BCX17SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX17 BCX18 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCX17 = T1 BCX18 = T2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RA
CDIL
CDIL
transistor
6BCX17SMALL SIGNAL PNP TRANSISTOR

BCX17 SMALL SIGNAL PNP TRANSISTOR Type BCX17 Marking T1 s SILICON EPITAXIAL PLANAR PNP TRANSISTORS s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS s MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING s NPN COMPLEMENTS IS BCX19 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLU
STMicroelectronics
STMicroelectronics
transistor
7BCX17PNP General Purpose Transistors

SMD Type TransistIoCrs PNP General Purpose Transistors BCX17,BCX18 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings
Kexin
Kexin
transistor
8BCX17PNP General Purpose Transistor

Production specification PNP General Purpose Transistor FEATURES z High current (max.500mA). z Low voltage(max.45V). Pb Lead-free BCX17/BCX18 APPLICATIONS z Saturated switching and driver applications e.g.for Industrial service. z Thick and thin-film circuits ORDERING INFORMATION Type No. Ma
Galaxy Microelectronics
Galaxy Microelectronics
transistor
9BCX17PNP small signal transistor

BCX17 PNP small signal transistor Parameter VCES IC Value -50V -500mA lFeatures 1)High gain and low saturation voltage. 2)Ideal for small load switching applications. 3)Complements the BCX19. lOutline   SOT-23           SST3                  lInner circu
ROHM Semiconductor
ROHM Semiconductor
transistor



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