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PDF 2N697 Data sheet ( Hoja de datos )
| Número de pieza | 2N697 | |
| Descripción | GENERAL PURPOSE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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2N697
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE
TRANSISTOR
NPN SILICON
Refer to 2N2218 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
=Total Device Dissipation (a TA 25°C
Derate above 25°C
Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCER
v CBO
Vebo
PD
Pd
TJ< Tstg
Value
40
60
5.0
0.6
4.0
2.0
13.3
- 65 to + 200
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltaged)
dc = 100 mAdc, Rbe = 10 ohms)
Collector-Base Breakdown Voltage
dC = 100 /xAdc, l£ = 0)
Emitter-Base Breakdown Voltage
(IE = 100 ^Adc, lc = 0)
Collector Cutoff Current
(V C B = 30 Vdc, Ie = 0)
(VC B = 30 Vdc, El = 0, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain(1)
dC = 150 mAdc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltaged)
dC = 150 mAdc, Ib = 15 mAdc)
Base-Emitter Saturation Voltaged)
dC = 150 mAdc, Ib = 15 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(VC b = 10 Vdc, El = 0)
Small-Signal Current Gain
C(l = 50 mAdc, VC e = 10 Vdc, f = 20 MHz)
(1) Pulse Test: Pulse Length =s 12 ms, Duty Cycle s 2.0%
Symbol
V (BR)CER
v (BRlCBO
v (BR)EBO
'CBO
Min
40
60
5.0
-
hFE
v CE(sat)
v BE(sat)
Cobo
hfe
40
—
—
-
2.5
Max
-
-
-
1.0
100
120
1.5
1.3
35
—
Unit
Vdc
Vdc
Vdc
Watt
mW/°C
Watts
mW/°C
°C
Unit
Vdc
Vdc
Vdc
/uAdc
-
Vdc
Vdc
pF
MHz
4-2
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N697.PDF ] | |
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