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Datasheet 1N5807 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
11N5807RECTIFIERS

Solid State
Solid State
rectifier
21N5807VOID-LESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS

1N5807, 1N5809 and 1N5811 Available on commercial versions VOID-LESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS Qualified per MIL-PRF-19500/477 DESCRIPTION This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where
Microsemi
Microsemi
rectifier
31N5807SUPERFAST RECTIFIER DIOSE

RECTIFIER, up to 150V, 6A, 30ns 1N5807 1N5809 1N5811 TEL:805-498-2111 FAX:805-498- 3804 WEB:http://www.semtech.com MECHANICAL G112 Dimensions DIM N Millimeters MIN MAX Inches MIN MAX Note A 2.92 3.61 .115 0.142 B 22.9 33.0 0.90 1.30 C 3.3 7.62 .130 0.3 D - 0.80 - .030 E 0.91 1.07 0.
Semtech
Semtech
rectifier
41N5807Rectifier Diode

1N5807(US), 1N5809(US), 1N5811(US) Rectifier Diode Series Ultrafast Recovery Features  Popular JEDEC Registered Series  Voidless Hermetically Sealed Glass Package  Available in Axial Leaded and MELF packages  Extremely Robust Construction  Internal “Category I” Metallurgical Bond
MA-COM
MA-COM
rectifier
51N5807ULTRAFAST RECOVERY RECTIFIER DIODES

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 1N5807 - 1N5811 PRV : 50 - 150 Volts Io : 6.0 Amperes ULTRAFAST RECOVERY RECTIFIER DIODES D2A FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop
EIC
EIC
rectifier
61N5807HIGH EFFICIENCY RECTIFIERS

1N5807-1N5811 High-reliability discrete products and engineering services since 1977 HIGH EFFICIENCY RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standa
Digitron Semiconductors
Digitron Semiconductors
rectifier
71N5807Diode Switching 8A 2-Pin GPR-4AM

New Jersey Semiconductor
New Jersey Semiconductor
diode
81N5807DIODE

Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IZM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-A) Max. Junction Tempera
DSI
DSI
diode
91N5807USRectifier Diode

1N5807(US), 1N5809(US), 1N5811(US) Rectifier Diode Series Ultrafast Recovery Features  Popular JEDEC Registered Series  Voidless Hermetically Sealed Glass Package  Available in Axial Leaded and MELF packages  Extremely Robust Construction  Internal “Category I” Metallurgical Bond
MA-COM
MA-COM
rectifier


1N5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
11N50Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
diode
21N50GOLD BONDED GERMANIUM DIODES

New Jersey Semiconductor
New Jersey Semiconductor
diode
31N50N-CHANNEL POWER MOSFET

1N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re
Unisonic Technologies
Unisonic Technologies
mosfet
41N50-KWN-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 1N50-KW Preliminary 1A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara
Unisonic Technologies
Unisonic Technologies
mosfet
51N500Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
diode
61N5000Silicon Rectifiers

Microsemi Corporation
Microsemi Corporation
rectifier
71N5000Diode Switching 400V 3A 2-Pin TOP HAT

New Jersey Semiconductor
New Jersey Semiconductor
diode
81N5001Silicon Rectifiers

Microsemi Corporation
Microsemi Corporation
rectifier
91N5001Diode Switching 600V 3A 2-Pin TOP HAT

New Jersey Semiconductor
New Jersey Semiconductor
diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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