|
|
Datasheet BYV27 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BYV27 | EPITAXIAL AVALANCHE DIODES www.eicsemi.com
BYV27 SERIES
EPITAXIAL AVALANCHE DIODES
PRV : 50 - 200 Volts Io : 2.0 Amperes
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Very fast recovery * Pb / RoHS Free
DO - 41
0.107 (2.7) 0.080 |  EIC | diode |
| 2 | BYV27 | Ultra fast low-loss controlled avalanche rectifiers DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV27 series Ultra fast low-loss controlled avalanche rectifiers
Product specification Supersedes data of 1996 Oct 02 1997 Nov 24
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
FE |  NXP Semiconductors | rectifier |
| 3 | BYV27 | Ultra Fast Silicon Mesa Rectifiers BYV27/...
Vishay Telefunken
Ultra Fast Silicon Mesa Rectifiers
Features
D D D D D
Controlled avalanche characteristic Low forward voltage Ultra fast recovery time Glass passivated junction Hermetically sealed package
Applications
Very fast rectifier e.g. for switch mode power supply
94 9539
Abso |  Vishay Telefunken | rectifier |
| 4 | BYV27 | 2.0A SUPER-FAST GLASS BODY RECTIFIER BYV27/50 - BYV27/200
2.0A SUPER-FAST GLASS BODY RECTIFIER Features
· · · · · · Hermetically Sealed Glass Body Construction Controlled Avalanche Characteristics Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 50A Peak Low Re |  Diodes Incorporated | rectifier |
| 5 | BYV27-100 | SUPER FAST RECTIFIERS BLGALAXY ELECTRICAL
SUPER FAST RECTIFIERS
BYV27-50(Z)---BYV27-600(Z)
VOLTAGE RANGE: 50 --- 600 V CURRENT: 2.0, 1.9,1.6 A
FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with alcohol,Isopropanol and sim ilar solvents
MECHANICAL DATA Ca |  Galaxy Semi-Conductor | rectifier |
| 6 | BYV27-100 | EPITAXIAL AVALANCHE DIODES www.eicsemi.com
BYV27 SERIES
EPITAXIAL AVALANCHE DIODES
PRV : 50 - 200 Volts Io : 2.0 Amperes
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Very fast recovery * Pb / RoHS Free
DO - 41
0.107 (2.7) 0.080 | EIC | diode |
| 7 | BYV27-100 | ULTRAFAST RECOVERY RECTIFIERS BYV27-50-BYV27-600
High-reliability discrete products and engineering services since 1977
ULTRAFAST RECOVERY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating) |  Digitron Semiconductors | rectifier |
| 8 | BYV27-100 | Ultra fast low-loss controlled avalanche rectifiers DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV27 series Ultra fast low-loss controlled avalanche rectifiers
Product specification Supersedes data of 1996 Oct 02 1997 Nov 24
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
FE | NXP Semiconductors | rectifier |
| 9 | BYV27-100 | RECTIFIERS |  Microsemi Corporation | rectifier |
BYV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BYV-100 | RECTIFIERS Microsemi Corporation rectifier | | |
| 2 | BYV-150 | RECTIFIERS Microsemi Corporation rectifier | | |
| 3 | BYV-50 | RECTIFIERS Microsemi Corporation rectifier | | |
| 4 | BYV10 | Schottky barrier diodes DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
BYV10 series Schottky barrier diodes
Product specification Supersedes data of April 1992 1996 May 13
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES • Low switching losses • Fast recovery time • Guard ring p NXP Semiconductors diode | | |
| 5 | BYV10-20 | Schottky barrier diodes DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
BYV10 series Schottky barrier diodes
Product specification Supersedes data of April 1992 1996 May 13
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES • Low switching losses • Fast recovery time • Guard ring p NXP Semiconductors diode | | |
| 6 | BYV10-20 | Diode Schottky 20V 1A 2-Pin SOD-81 New Jersey Semiconductor diode | | |
| 7 | BYV10-30 | Schottky barrier diodes DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
BYV10 series Schottky barrier diodes
Product specification Supersedes data of April 1992 1996 May 13
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES • Low switching losses • Fast recovery time • Guard ring p NXP Semiconductors diode | | |
| 8 | BYV10-30 | Diode Schottky 30V 1A 2-Pin GALF New Jersey Semiconductor diode | | |
| 9 | BYV10-40 | SMALL SIGNAL SCHOTTKY DIODES ®
BYV 10- 40
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
DO 41 (Glass)
ABSOLUTE RAT  STMicroelectronics diode | |
| Esta página es del resultado de búsqueda del BYV27. Si pulsa el resultado de búsqueda de BYV27 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |