|
|
Datasheet 1N6382 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N6382 | TVS Diode, Rectifier www.vishay.com
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
Case Style 1.5KE
PRIMARY CHARACTERISTICS
VWM
5.0 V to 18 V
VBR (uni-directional)
6.0 V to 21.2 V
VBR (bi-directional)
9.2 V to 21.2 V
PPPM
1500 W
PD 6.5 W
IFSM
| Vishay | tvs-diode |
2 | 1N6382 | Diode, Rectifier, TVS Type MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: [email protected] Web: www.mdesemiconductor.com
ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389
GLASS PASSIVATED JU | MDE | tvs-diode |
3 | 1N6382 | Diode, 1500W, TVS, Rectifier 1500W Transient Voltage Suppressor ICTE-5 - ICTE-45C
1500W Transient Voltage Suppressor
Features
• Glass passivated junction • 1500W Peak Pulse Power capability with a 10/1000 μs waveform • Very Low clamping voltage • Stand-off Voltage Range 5V to 45V • Unidirectional and Bidirectional | TAITRON | tvs-diode |
4 | 1N6382 | Transient Voltage Suppressor 1N6373-1N6389
High-reliability discrete products and engineering services since 1977
Transient Voltage Suppressor
1500 Watt
FEATURES:
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number Available Non-RoHS (standard) or | Digitron Semiconductors | tvs-diode |
5 | 1N6382 | 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION
1N6373 thru 1N6389, e3 or MPTE-5 thru MPTE-45C, e3
1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR
WWW.Microsemi .COM
DESCRIPTION
APPEARANCE
This Transient Voltage Suppressor (TVS) series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirection | Microsemi | tvs-diode |
6 | 1N6382 | GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STANDOFF VOLTAGE- 5.0 to 45.0V 1500 Watt Peak Power MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 • Fax: 760-564-2414
ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR STANDOFF VOLTAGE- 5.0 to 45.0V 1500 Watt Peak | ETC | tvs-diode |
7 | 1N6382 | Diode TVS Single Bi-Dir 8V 1.5KW 2-Pin Case 1 | New Jersey Semiconductor | diode |
8 | 1N6382 | Zener Transient Voltage Suppressors 1N6382 − 1N6389 Series (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C)
1500 Watt Peak Power Mosorb™ Zener Transient Voltage Suppressors
Bidirectional*
Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have excellent clamp | ON Semiconductor | tvs-diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f Formosa MS diode | | |
8 | 1N60 | N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 1N60
1.2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This powe Unisonic Technologies mosfet | | |
9 | 1N60 | SMALL SIGNAL SCHOTTKY DIODE BL
FEATURES
GALAXY ELECTRICAL
VOLTAGE RANGE: 40 V CURRENT: 0.03 A
1N 6 0
SMALL SIGNAL SCHOTTKY DIODE
Metal s illicon junction m ajority carrier conduction High current capability,low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics Sm all tem perat BL diode | |
Esta página es del resultado de búsqueda del 1N6382. Si pulsa el resultado de búsqueda de 1N6382 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |