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Número de pieza | MPSA06 | |
Descripción | NPN Plastic Encapsulate Transistor | |
Fabricantes | SeCoS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MPSA06 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Elektronische Bauelemente
MPSA06
NPN
Plastic-Encapsulate Transistor
FEATURES
*Low current (max. 500 mA)
*Low voltage (max. 80 V).
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
4.55±0.2
TO-92
3.5±0.2
APPLICATIONS
*General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-92; plastic package.
PNP complement: MPSA56.
0.46±0.1
0.43+–00..0078
(1.27 Typ.)
1.25±0.2
12 3
2.54±0.1
1: Emitter
2: Base
3: Collector
Symbol
PCM
I CM
V(BR)CBO
Tstg
TJ
Parameter
Power Dissipation
Collector Current
Collector-Base Voltage
Storage Temperature
Junction Temperature
Value
0.625
0.5
80
-55~+150
150
Units
W
A
V
CO
CO
ELECTRICAL CHARACTERISTICS (Tamb=25 oC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
HFE(1)
VCE(sat)
VBE(sat)
Test conditions
Ic=100µA, IE=0
IC= 1mA , IB=0
IE=100µA, IC=0
VCB=60V, IE=0
VCE=60V, IB=0
VEB=3V, IC=0
VCE=1V, IC= 100mA
IC=100 mA, IB=10mA
IC= 100 mA, IB=10mA
MIN
80
80
4
100
MAX UNIT
V
V
V
0.1 µA
0.1 µA
0.1 µA
200
0.25 V
1.2 V
Transition frequency
fT
VCE= 2 V, IC= 10mA
f = 100MHz
100
MHz
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MPSA06.PDF ] |
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