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PDF MPS2369A Data sheet ( Hoja de datos )
| Número de pieza | MPS2369A | |
| Descripción | Switching Transistors | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS2369/D
Switching Transistors
NPN Silicon
COLLECTOR
3
MPS2369
MPS2369A*
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCES
VCBO
VEBO
IC
PD
15 Vdc
40 Vdc
40 Vdc
4.5 Vdc
200 mAdc
625 mW
5.0 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 10 µAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 125°C)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MPS2369A
MPS2369,A
MPS2369,A
MPS2369,A
MPS2369,A
MPS2369,A
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
ICES
Min
15
40
40
4.5
—
—
—
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— — Vdc
µAdc
— 0.4
— 30
— 0.4 µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MPS2369A.PDF ] | |
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