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Datasheet 2N4123 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N4123 | GENERAL PURPOSE TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
NPN Silicon
2N4123 2N4124
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol 2N4123 2N4124
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device |  Motorola Semiconductors | transistor |
| 2 | 2N4123 | SILICON TRANSISTORS 2N4123 2N4124 NPN 2N4125 2N4126 PNP
COMPLEMENTARY SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4123 series devices are complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplif |  Central Semiconductor | transistor |
| 3 | 2N4123 | General Purpose Transistors(NPN Silicon) 2N4123, 2N4124 General Purpose Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 2 BASE 1 EMITTER
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage 2N4123 2N4124 Collector−Base Voltage 2N4123 2N4124 Emitter−Base Voltage Collector Current − C |  ON Semiconductor | transistor |
| 4 | 2N4123 | NPN EPITAXIAL SILICON TRANSISTOR |  Samsung semiconductor | transistor |
| 5 | 2N4123 | NPN General Purpose Amplifier 2N4123
Discrete POWER & Signal Technologies
[ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ]
2N4123
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 23. |  Fairchild Semiconductor | amplifier |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo  Unisonic Technologies mosfet | | |
| 2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee  Texas transistor | | |
| 3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I  Seme LAB data | | |
| 4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
| 5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
| 6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
| 7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
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| Número de pieza | Descripción | Fabricantes | |
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