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PDF MJE3055T Data sheet ( Hoja de datos )
| Número de pieza | MJE3055T | |
| Descripción | Complementary Silicon Power Ttransistors | |
| Fabricantes | TGS | |
| Logotipo |  |
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TIGER ELECTRONIC CO.,LTD
E Product specification
Complementary Silicon Power Ttransistors
MJE3055T / MJE2955T
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO 70 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
60 V
5V
10 A
6A
75 W
150 oC
-55~150 oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
ICEO VCB=60V, IE=0
Emitter Cut-off Current
IEBO VEB=5V, IC=0
Collector-Emitter Sustaining Voltage
DC Current Gain
VCEO
hFE(1)
hFE(2)
IC=100mA, IB=0
VCE=4V, IC=4.0A
VCE=4V, IC=10.0A
Collector-Emitter Saturation Voltage
VCE(sat) IC=4.0A,IB=400mA
IC=10.0A,IB=3.3A
Base-Emitter Saturation Voltage
VBE(sat) VCE=4V,IC=4.0A
Current Gain Bandwidth Product
fT VCE=10V,IC=500mA
Min.
60
20
5
2
Typ.
Max. Unit
0.3 mA
5.0 mA
V
100
1.1
V
8.0
1.8 V
MHz
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| PDF Descargar | [ Datasheet MJE3055T.PDF ] | |
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