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PDF ALD1105 Data sheet ( Hoja de datos )
| Número de pieza | ALD1105 | |
| Descripción | DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR | |
| Fabricantes | Advanced Linear Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ALD1105 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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ADVANCED
LINEAR
DEVICES, INC.
DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1105
GENERAL DESCRIPTION
The ALD1105 is a monolithic dual N-channel and dual P-channel
complementary matched transistor pair intended for a broad range of
analog applications. These enhancement-mode transistors are
manufactured with Advanced Linear Devices' enhanced ACMOS silicon
gate CMOS process. It consists of an ALD1116 N-channel MOSFET pair
and an ALD1117 P-channel MOSFET pair in one package. The ALD1105
is a low drain current, low leakage current version of the ALD1103.
The ALD1105 offers high input impedance and negative current temperature
coefficient. The transistor pair is matched for minimum offset voltage and
differential thermal response, and it is designed for precision signal
switching and amplifying applications in +2V to +12V systems where low
input bias current, low input capacitance and fast switching speed are
desired. Since these are MOSFET devices, they feature very large (almost
infinite) current gain in a low frequency, or near DC, operating environment.
When used in complementary pairs, a dual CMOS analog switch can be
constructed. In addition, the ALD1105 is intended as a building block for
differential amplifier input stages, transmission gates, and multiplexer
applications.
The ALD1105 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 30pA at room temperature. For example, DC beta of the device
at a drain current of 3mA at 25°C is = 3mA/30pA = 100,000,000.
FEATURES
• Thermal tracking between N-channel and P-channel pairs
• Low threshold voltage of 0.7V for both N-channel &
P-channel MOSFETS
• Low input capacitance
• Low Vos -- 10mV
• High input impedance -- 1013Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 109
• Matched N-channel and matched P-channel in one package
• RoHS compliant
APPLICATIONS
• Precision current mirrors
• Complementary push-pull linear drives
• Analog switches
• Choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog inverter
• Precision matched current sources
PIN CONFIGURATION
DN1 1
GN1 2
14 DN2
13 GN2
SN1 3
V- 4
12 SN2
11 V+
DP1 5
10 DP2
GP1 6
9 GP2
SP1
78
TOP VIEW
SBL, PBL, DB PACKAGES
SP2
BLOCK DIAGRAM
N GATE 1 (2)
N DRAIN 1 (1)
N DRAIN 2 (14)
N SOURCE 1 (3)
SUBSTRATE (4)
N SOURCE 2 (12)
N GATE 2 (13)
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
-55°C to +125°C
14-Pin
Small Outline
Package (SOIC)
14-Pin
Plastic Dip
Package
14-Pin
CERDIP
Package
ALD1105SBL
ALD1105PBL
ALD1105DB
* Contact factory for leaded (non-RoHS) or high temperature versions.
P GATE 1 (6)
P DRAIN 1 (5)
P DRAIN 2 (10)
P SOURCE 1 (7)
SUBSTRATE (11)
P SOURCE 2 (8)
P GATE 2 (9)
Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
1 page  
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
V+ = +5V
ISET
RSET
Q3
V+ = +5V
Q4
I SOURCE
Q1 Q2
Q1, Q2: N - Channel MOSFET
Q3, Q4: P - Channel MOSFET
I SOURCE = ISET
= V+ -Vt
RSET
=~ 4
RSET
CURRENT SOURCE WITH GATE CONTROL
V+ = +5V
Q3 Q4
ISET
Digital Logic Control
of Current Source
ON
RSET
Q1
ISOURCE
OFF
Q1 : N - Channel MOSFET
Q3,Q4 : P - Channel MOSFET
DIFFERENTIAL AMPLIFIER
V+
PMOS PAIR
Q3 Q4
VIN+
Q1 Q2
NMOS PAIR
VOUT
VIN-
CURRENT SOURCE MULTIPLICATION
V+ = +5V
ISET
RSET
QSET
Q1 Q2 Q3
ISOURCE = ISET x N
QN
ALD1105
Current
Source
Q1, Q2: N - Channel MOSFET
Q3, Q4: P - Channel MOSFET
QSET, Q1..QN: ALD 1106 or ALD 1105
N - Channel MOSFET
ALD1105
Advanced Linear Devices
5 of 9
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet ALD1105.PDF ] | |
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