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Datasheet MDIS1501 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MDIS1501 | N-Channel Trench MOSFET MDIS1501 – Single N-Channel Trench MOSFET 30V
MDIS1501
Single N-channel Trench MOSFET 30V, 67.4A, 5.6mΩ
General Description
The MDIS1501 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDIS |  MagnaChip | mosfet |
MDI Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MDI100-12A3 | IGBT Modules MII 100-12 A3
MID 100-12 A3 MDI 100-12 A3
IGBT Modules
Short Circuit SOA Capability Square RBSOA
IC25 = 135 A VCES = 1200 V VCE(sat) typ. = 2.2 V
MII
1
MID
1
MDI
1
3
2
1
4 5 6 7
7 6
3
3
7 6
3
4 5
2
4 5
2
2
E 72873
Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot  ETC igbt | | |
| 2 | MDI100-12A3 | IGBT Module IGBT (NPT) Module
Buck Chopper + free wheeling Diode
Part number
MDI100-12A3
MDI100-12A3
VCES I C25 VCE(sat)
= = =
1200 V 135 A 2.2 V
7 6
Features / Advantages:
● NPT IGBT technology ● low saturation voltage ● low switching losses ● switching frequency up to 30 kHz ● square RBSOA, no  IXYS igbt | | |
| 3 | MDI145-12A3 | IGBT Modules - Short Circuit SOA Capability Square RBSOA
MII 145-12 A3
MID 145-12 A3 MDI 145-12 A3
IGBT Modules
Short Circuit SOA Capability Square RBSOA
IC25 = 160 A = 1200 V VCES VCE(sat) typ. = 2.2 V
MII
1
MID
1
MDI
1
3
2
1
4 5 6 7
7 6
3
3
7 6
3
4 5
2
4 5
2
2
E 72873
Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tS  IXYS Corporation igbt | | |
| 4 | MDI150-12A4 | IGBT Modules Short Circuit SOA Capability Square RBSOA
MII 150-12 A4
MID 150-12 A4 MDI 150-12 A4
IGBT Modules
Short Circuit SOA Capability Square RBSOA
MII
3
IC25 = 180 A VCES = 1200 V VCE(sat) typ. = 2.2 V
MID
3
MDI
3
1
2
3 11 10 9 8
8 9
1
1
8 9
1
11 10
2
11 10
2
2
Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SC IXYS Corporation igbt | | |
| 5 | MDI1752 | N-Channel Trench MOSFET MDI1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
MDI1752
N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
General Description
The MDI1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability
Low RDS(ON), low gate MagnaChip mosfet | | |
| 6 | MDI1N60S | N-Channel Trench MOSFET MDI1N60S N-channel MOSFET 600V
MDI1N60S
N-Channel MOSFET 600V, 1.0A, 8.5Ω
General Description
The MDI1N60S uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.
MDI1N60S is suitable device for SMPS, compact ballas MagnaChip mosfet | | |
| 7 | MDI200-12A4 | IGBT Module IGBT Modules
Short Circuit SOA Capability Square RBSOA
MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4
IC25 = 270 A
VCES
= 1200 V
V = 2.2 V CE(sat) typ.
MII
3
MID
3
MDI
3
8 91
8 19
1
11 11 10 2 10 2
2
3 2 1
11 10
9 8
Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA
Ptot TJ Tstg V IXYS igbt | | |
| 8 | MDI2N60 | N-Channel Trench MOSFET MDD2N60/MDI2N60 N-channel MOSFET 600V
MDD2N60/MDI2N60
N-Channel MOSFET 600V, 1.9A, 4.5Ω
General Description
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices a MagnaChip mosfet | | |
| 9 | MDI300-12A4 | IGBT Modules MII 300-12 A4
MID 300-12 A4 MDI 300-12 A4
IGBT Modules
Short Circuit SOA Capability Square RBSOA
MII
3
IC25 = 330 A VCES = 1200 V VCE(sat) typ. = 2.2 V
MID
3
MDI
3
1
2
3 11 10 9 8
8 9
1
1
8 9
1
11 10
2
11 10
2
2
E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Pt IXYS igbt | |
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