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PDF MMB2G Data sheet ( Hoja de datos )
| Número de pieza | MMB2G | |
| Descripción | SILICON BRIDGE RECTIFIERS | |
| Fabricantes | Galaxy Microelectronics | |
| Logotipo |  |
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Production specification
SILICON BRIDGE RECTIFIERS
MMB1G--MMB10G
FEATURES
z Glass：passivated chip junctions
z High surge overload rating: 30A peak
Pb
Lead-free
z Saves space on printed circuit boards
z High temperature soldering guaranteed: 260°C/10 seconds at 5 lbs. (2.3kg) tension
MECHANICAL DATA
z Case: Molded plastic body over passivated junctions
z Terminals: Plated leads solderable per MIL-STD-750, Method 2026
Maximum Ratings (@TA = 25°C unless otherwise specified)
Characteristic
Symbol MMB1G MMB2G MMB4G MMB6G
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
DC Blocking Voltage
Maximum average forward Output current
@TA=25℃
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
VRRM
100
200
400
600
VRMS
70
140 280 420
VDC 100 200 400 600
IF(AV)
0.51)
0.82)
IFSM 30
MMB8G
800
560
800
MMB10G
1000
700
1000
UNITS
V
V
V
A
A
Thermal Characteristics
Characteristic
Typical junction capacitance per leg (NOTE 3)
Typical thermal resistance per leg (NOTE 1)
(NOTE 2)
Operating junction temperature range
Storage temperature range
Symbol
CJ
R ΘJA
RθJL
RθJC
TJ
TSTG
MMB1G
MMB2G
MMB4G MMB6G
8
85
20
30
- 55 ---- + 150
- 55 ---- + 150
MMB8G
MMB10G
UNITS
pF
℃/W
℃
℃
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Symbol MMB1G MMB2G MMB4G MMB6G MMB8G MMB10G UNITS
Maximum instantaneous forward voltage
VF 1.0 V
at 0.4 A
Maximum reverse current @TA=25℃
at rated DC blocking voltage @TA=100℃
IR
NOTES: (1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3mm) pads
5.0
0.5
μA
mA
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20mm) mounted on 0.05 x 0.05" (1.3 x 1.3mm) solder pad
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
Document Number: MMB701AA
www.gmicroelec.com
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MMB2G.PDF ] | |
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