(PDF) MS1455 Datasheet - RF & MICROWAVE TRANSISTORS

Número de pieza	MS1455
Descripción	RF & MICROWAVE TRANSISTORS
Fabricantes	Advanced Power Technology
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No Preview Available ! RF & MICROWAVE TRANSISTORS 800 - 900 MHz APPLICATIONS Features • 836 MHz • 12.5 VOLTS • POUT = 45 WATTS • GP = 4.7 dB MINIMUM • COMMON BASE CONFIGURATION DESCRIPTION: The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the entire frequency band. Gold metalization and emitter ballast resistors assures infinite VSWR capability and long term reliability. MS1455 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO Collector-Base Voltage VEBO Emitter-Base Voltage VCEO Collector-Emitter Voltage VCES Collector-Emitter Voltage PDISS IC Power Dissipation Device Current TJ Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-case 053-7078 Rev - 10-2002 Value 36 4.0 18 36 150 9.0 200 -65 to +150 1.2 Unit V V V V W A °C °C °C/W 1 page

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PDF MS1455 Data sheet ( Hoja de datos )