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PDF MS1454 Data sheet ( Hoja de datos )
| Número de pieza | MS1454 | |
| Descripción | RF & MICROWAVE TRANSISTORS | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MS1454 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF AND MICROWAVE TRANSISTORS
806-960 MHZ CELLULAR BASE STATIONS
MS1454
Features
• Gold Metallization
• Diffused Emitter Ballasting
• Internal Input Matching
• Designed for Linear Operation
• High Saturated Power Capability
• Common Emitter Configuration
• POUT
• Gain
30 W MIN
7.5 dB
• Efficiency 55% (Typ)
• 20:1 VSWR
• Overdrive Survivability 5 dB
DESCRIPTION:
The MS1454 gold/metallized epitaxial silicon NPN planar transistor
uses diffused emitter ballast resistors for high linearity class AB
operation in cellular base station applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
PDISS
Total Power Dissipation
IC Collector Current
Tj Junction Temperature
Tstg Storage Temperature
Value
48
25
3.5
88
7.5
+200
-65 to +150
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
2
Unit
V
V
V
W
A
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
1 page  
PACKAGE MECHANICAL DATA
MS1454
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MS1454.PDF ] | |
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