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PDF MJE521 Data sheet ( Hoja de datos )
| Número de pieza | MJE521 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJE521
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 40 V(Min)
·DC Current Gain-
: hFE = 40(Min) @ IC= 1A
·Complement to Type MJE371
APPLICATIONS
·Designed for use in general−purpose amplifier and
switching circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40 V
VCEO
Collector-Emitter Voltage
40 V
VEBO
Emitter-Base Voltage
4V
IC Collector Current-Continuous
4A
ICM Collector Current-Peak
8A
IB Base Current-Continuous
PC
Collector Power Dissipation
TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
2
40
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.12 ℃/W
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MJE521.PDF ] | |
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