Datasheet MJD45H11 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	MJD45H11	Silicon PNP Power Transistor isc Silicon PNP Power Transistors INCHANGE Semiconductor MJD45H11 DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD44H11 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device perf	Inchange Semiconductor	transistor
2	MJD45H11	Complementary Power Transistors SMD Type Transistors Complementary Power Transistors MJD45H11 Features Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching Speeds Complementary Pairs Simplifies Designs Pb?Free Packages are Available +09.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.	Kexin	transistor
3	MJD45H11	Complementary Power Transistors MJD44H11 (NPN), MJD45H11 (PNP) Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surfa	ON Semiconductor	transistor
4	MJD45H11	PNP Epitaxial Silicon Transistor MJD45H11 — PNP Epitaxial Silicon Transistor April 2015 MJD45H11 PNP Epitaxial Silicon Transistor Features • General-Purpose Power and Switching such as Output or Driver Stages in Applications • D-PAK for Surface-Mount Applications • Lead-Formed for Surface Mount Application (No Suffix) •	Fairchild	transistor
5	MJD45H11	Complementary power transistors MJD44H11, MJD45H11 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications ■ Power amplifier ■ Switching circuits Description These devices are man	ST Microelectronics	transistor
6	MJD45H11	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H11/D Complementary Power Transistors • • • • • • • MJD44H11 * PNP MJD45H11 * *Motorola Preferred Device NPN DPAK For Surface Mount Applications . . . for general purpose power and switching such as output or drive	Motorola Semiconductors	transistor
7	MJD45H11T4-A	Complementary power transistors MJD44H11T4-A MJD45H11T4-A Complementary power transistors Features ■ ■ ■ ■ . The devices are qualified for automotive application Low collector-emitter saturation voltage Fast switching speed Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4")	ST Microelectronics	transistor

MJD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	MJD112	Silicon NPN transistor MJD112 Rev.E May.-2016 DATA SHEET 描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package. 特征 / Features 直流电流增益高，E 与 C 间内置阻尼二极管电性能与 TIP112 等同。 High DC current gain, built-in a damp	BLUE ROCKET ELECTRONICS	transistor
2	MJD112	Silicon NPN epitaxial planer Transistors MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MJD112 Features • Lead Free Finish/RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information) • Case Material:Molded Plast	MCC	transistor
3	MJD112	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for	Inchange Semiconductor	transistor
4	MJD112	NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor Features • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) November 2006 tm Equivalent Circuit C B 1 D-PAK 1.Base 2.Collector 3.Emitter R1 R2	Fairchild Semiconductor	transistor
5	MJD112	COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK (TO-252) Plastic Package Designed for General Purpose Power and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Coll	CDIL	transistor
6	MJD112	NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD112 TRANSISTOR (NPN) yFEATURES Complementary Darlington Power Transistors Dpak for Surface Mount Applications TO-251-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise note	JCET	transistor
7	MJD112	Complementary Darlington Power Transistors MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surf	ON	transistor
8	MJD112	Complementary power Darlington transistors MJD112 MJD117 Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The devices are manufactu	ST Microelectronics	transistor
9	MJD112	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR I J FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Q C K Complementary to MJD117	KEC(Korea)	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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