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PDF MJD31C Data sheet ( Hoja de datos )
| Número de pieza | MJD31C | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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isc Silicon NPN Power Transistors
INCHANGE Semiconductor
MJD31C
DESCRIPTION
·DC Current Gain -hFE = 25(Min)@ IC= 1A
·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 100V(Min)
·Complement to Type MJD32C
·DPAK for Surface Mount Applications
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current
Collector Power Dissipation
TC=25℃
Collector Power Dissipation
Ta=25℃
Junction Temperature
100 V
100 V
5V
3A
5A
1A
15
W
1.56
150 ℃
Tstg Storage Ttemperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
8.3 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MJD31C.PDF ] | |
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