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Datasheet BUY69B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BUY69B | NPN Silicon Power Transistor |  Texas | transistor |
| 2 | BUY69B | Bipolar NPN Device BUY69B
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 |  Semelab | data |
| 3 | BUY69B | Power Transistor A
A
|  Mospec Semiconductor | transistor |
| 4 | BUY69B | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUY69A BUY69B BUY69C
·
www.datasheet4u.com
DESCRIPTION With TO-3 package ·High voltage capability APPLICATIONS ·For horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial |  SavantIC | transistor |
BUY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BUY18S | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BUY18S
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) ma  Seme LAB data | | |
| 2 | BUY24 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUY24
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V@ IC= 5A
APPLICATIONS ·Designed for use switching and general purpose applications.
 Inchange Semiconductor transistor | | |
| 3 | BUY24 | SILICON PLANAR EPITAXIAL NPN POWER SWITCHING TRANSISTOR BUY24
MECHANICAL DATA Dimensions in mm (inches)
SILICON PLANAR EPITAXIAL NPN POWER SWITCHING TRANSISTOR
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
FEATURES
• CECC SCREENING OPTIONS
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
Seme LAB transistor | | |
| 4 | BUY24 | Trans GP BJT NPN 60V 5A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor data | | |
| 5 | BUY25CS12K-01 | HiRel RadHard Power-MOS Data Sheet BUY25CS12K-01 HiRel RadHard Power-MOS
Low RDS(on)
Single Event Effect (SEE) hardened
LET 85, Range: 118µm LET 55, Range: 90µm
VGS = -10V, VDS = 250V
VGS = -15V, VDS = 250V
VGS = -15V, VDS = 120V
VGS = -20V, VDS = 160V
Total Ionisation Dose (TID) hardened
100 kRad app  Infineon data | | |
| 6 | BUY25CS12K-11 | HiRel RadHard Power-MOS Data Sheet BUY25CS12K-01 HiRel RadHard Power-MOS
Low RDS(on)
Single Event Effect (SEE) hardened
LET 85, Range: 118µm LET 55, Range: 90µm
VGS = -10V, VDS = 250V
VGS = -15V, VDS = 250V
VGS = -15V, VDS = 120V
VGS = -20V, VDS = 160V
Total Ionisation Dose (TID) hardened
100 kRad app Infineon data | | |
| 7 | BUY25CS45B-01 | HiRel RadHard Power-MOS Data Sheet BUY25CS45B-01 HiRel RadHard Power-MOS
Low RDS(on)
Single Event Effect (SEE) hardened
LET 85, Range: 118µm LET 55, Range: 90µm
VGS = -10V, VDS = 250V
VGS = -15V, VDS = 250V
VGS = -15V, VDS = 120V
VGS = -20V, VDS = 160V
Total Ionisation Dose (TID) hardened
100 kRad app Infineon data | | |
| 8 | BUY30 | Bipolar NPN Device www.DataSheet.co.kr
BUY30
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.19 Seme LAB data | | |
| 9 | BUY34D | T-1 (3mm) BLINKING LED LAMP www.DataSheet.co.kr
Part Number:
www.SunLED.com
BUY34D
T-1 (3mm) BLINKING LED LAMP
Features
T-1 PACKAGE WITH RECTANGULAR BASE. WITH BUILT-IN BLINKING IC. OPERATION VOLTAGE FROM 3.5V TO 14V. BLINKING FREQUENCY FROM 3.0Hz TO 1.5Hz. RoHS COMPLIANT.
Notes: 1. All dimensions are in millimeters (inc  SunLED Corporation led | |
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