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PDF MJD6039 Data sheet ( Hoja de datos )
| Número de pieza | MJD6039 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
MJD6039
DESCRIPTION
·Collector–Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
·High DC Current Gain-
: hFE = 500(Min)@IC= 2A
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for general purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
80 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
4A
ICM Collector Current-Peak
8A
IB Base Current
Collector Power Dssipation
TC=25℃
PC Collector Power Dissipation
Ta=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
0.1
20
1.75
150
-65~150
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
6.25 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MJD6039.PDF ] | |
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