DataSheet.es    


PDF SSF5508D Data sheet ( Hoja de datos )

Número de pieza SSF5508D
Descripción N-Channel MOSFET
Fabricantes GOOD-ARK 
Logotipo GOOD-ARK Logotipo



Hay una vista previa y un enlace de descarga de SSF5508D (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! SSF5508D Hoja de datos, Descripción, Manual

Main Product Characteristics
SSF5508D
Preliminary
VDSS
RDS(on)
60VTyp
3.8mohmTyp
ID 110A
Features and Benefits
SSF5508D Top View (DPAK)
Advanced trench MOSFET process technology
Special designed for convertors and power controls
Ultra low on-resistance
150operating temperature
High Avalanche capability and 100% tested
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
ISM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Pulsed Source Current.(Body Diode)
Power Dissipation
PD @TC = 25°C
Linear derating factor
VDS Drain-Source Voltage
VGS
Gate-to-Source Voltage
dv/dt
Peak diode recovery voltage
EAS Single Pulse Avalanche Energy @ L=0.3mH
IAR Avalanche Current @ L=0.3mH
TJ TSTG
Operating Junction and Storage Temperature
Range
Max.
110
80
440
400
170
2
55
± 20
35
735
65
-55 to + 150
Units
A
W
W/ Cْ
V
V
v/ns
mJ
A
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t ≤ 10s)
Value
0.73
50
Unit
/W
/W
www.goodark.com
Page 1 of 6
Rev.1.0

1 page




SSF5508D pdf
Typical Electrical and Thermal Characteristics
SSF5508D
Preliminary
Figure 13:Transient Thermal Impedance Curve
Notes:The maximum current rating is limited by bond-wires.
Repetitive rating; pulse width limited by max. junction temperature.
The power dissipation PD is based on max. junction temperature, using junction-to-case
thermal resistance.
The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
www.goodark.com
Page 5 of 6
Rev.1.0

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet SSF5508D.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
SSF5508MOSFET ( Transistor )Silikron Semiconductor Co
Silikron Semiconductor Co
SSF550855V N-Channel MOSFETGOOD-ARK
GOOD-ARK
SSF5508A55V N-Channel MOSFETGOOD-ARK
GOOD-ARK
SSF5508AMOSFET ( Transistor )Silikron Semiconductor
Silikron Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar