|
|
Número de pieza | SSF5508D | |
Descripción | N-Channel MOSFET | |
Fabricantes | GOOD-ARK | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSF5508D (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Main Product Characteristics
SSF5508D
Preliminary
VDSS
RDS(on)
60V(Typ)
3.8mohm(Typ)
ID 110A
Features and Benefits
SSF5508D Top View (DPAK)
Advanced trench MOSFET process technology
Special designed for convertors and power controls
Ultra low on-resistance
150℃ operating temperature
High Avalanche capability and 100% tested
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V①
ID @ TC = 100°C
IDM
ISM
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Pulsed Source Current.(Body Diode)
Power Dissipation③
PD @TC = 25°C
Linear derating factor
VDS Drain-Source Voltage
VGS
Gate-to-Source Voltage
dv/dt
Peak diode recovery voltage
EAS Single Pulse Avalanche Energy @ L=0.3mH②
IAR Avalanche Current @ L=0.3mH②
TJ TSTG
Operating Junction and Storage Temperature
Range
Max.
110
80
440
400
170
2
55
± 20
35
735
65
-55 to + 150
Units
A
W
W/ Cْ
V
V
v/ns
mJ
A
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Value
0.73
50
Unit
℃/W
℃/W
www.goodark.com
Page 1 of 6
Rev.1.0
1 page Typical Electrical and Thermal Characteristics
SSF5508D
Preliminary
Figure 13:Transient Thermal Impedance Curve
Notes:①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case
thermal resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
www.goodark.com
Page 5 of 6
Rev.1.0
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSF5508D.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSF5508 | MOSFET ( Transistor ) | Silikron Semiconductor Co |
SSF5508 | 55V N-Channel MOSFET | GOOD-ARK |
SSF5508A | 55V N-Channel MOSFET | GOOD-ARK |
SSF5508A | MOSFET ( Transistor ) | Silikron Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |