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Datasheet 1N5264B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5264B | Voltage regulator diodes DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
1N5225B to 1N5267B Voltage regulator diodes
Product specification Supersedes data of April 1992 1996 Apr 26
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES • Total power dissipation: max. 500 mW • Tolerance series: |  NXP Semiconductors | diode |
| 2 | 1N5264B | Absolute Maximum Ratings Zeners (1N5221B - 1N5279B)
Zeners 1N5221B - 1N5279B
Absolute Maximum Ratings*
Symbol
PD TSTG TJ
TA = 25°C unless otherwise noted
Tolerance = 5%
Parameter
Power Dissipation Derate above 75°C Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (1/16” from case for |  Fairchild Semiconductor | diode |
| 3 | 1N5264B | Zener Diode, Rectifier Zeners (1N5221B - 1N5279B)
Zeners 1N5221B - 1N5279B
Absolute Maximum Ratings*
Symbol
PD TSTG TJ
TA = 25°C unless otherwise noted
Tolerance = 5%
Parameter
Power Dissipation Derate above 75°C Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (1/16” from case for | Fairchild Semiconductor | diode |
| 4 | 1N5264B | 500mW EPITAXIAL ZENER DIODE |  Diodes Incorporated | diode |
| 5 | 1N5264B | Silicon Z-Diodes 1N5221B...1N5267B
Vishay Telefunken
Silicon Z–Diodes
Features
D D D D
Very sharp reverse characteristic Very high stability Low reverse current level VZ–tolerance ± 5%
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Z–current Junct |  Vishay Telefunken | diode |
| 6 | 1N5264B | 1N52 SERIES ZENER DIODES |  Leshan Radio Company | diode |
| 7 | 1N5264B | Zener diode Formosa MS
1N5221B~1N5267B
Zener diode
Features
1. 2. 3. 4. High reliability Very sharp reverse characteristic Low reverse current level VZ -tolerance± 5%
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj=25? Parameter Power dissipation Z-current Junction temperature Storage temper |  Formosa MS | diode |
| 8 | 1N5264B | 500mw Epitaxial Zener Diode 500mw Epitaxial Zener Diode
COMCHIP
www.comchiptech.com
1N5221B thru 1N5267B
Nominal Zener Voltage: 2.4 to 75V Power Dissipation: 0.5W
DO-35 Glass
Features
500mW Power Dissipation 2.4V - 75V Nominal Zener Voltage Low Noise Surface Mount Equivalents Available Hermetic Package VZ - Tolerance 5%
1.0 |  Comchip Technology | diode |
| 9 | 1N5264B | ZENER DIODE 2.4 VOLTS THRU 200VOLTS 500mL/ 5% TOLERANCE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
|  Central Semiconductor Corp | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | | |
| 8 | 1N5001 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 9 | 1N5001 | Diode Switching 600V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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