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PDF SS247 Data sheet ( Hoja de datos )
| Número de pieza | SS247 | |
| Descripción | CMOS Omnipolar High Sensitivity Micropower Hall Switch | |
| Fabricantes | SEC | |
| Logotipo |  |
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SS247
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Features
− Micropower consumption for battery powered applications
− Omnipolar, output switches with absolute value of North or South pole from magnet
− Operation down to 2.5V
− High sensitivity for direct reed switch replacement applications
− CMOS output
3 pin SOT23 (suffix SO)
3 pin SIP (suffix UA)
General Description
The SS247 Omnipolar Hall effect sensor IC is fabri-
cated from mixed signal CMOS technology .It incor-
porates advanced chopper-stabilization techniques to
provide accurate and stable magnetic switch points.
The circuit design provides an internally controlled
clocking mechanism to cycle power to the Hall ele-
ment and analog signal processing circuits. This
serves to place the high current-consuming portions
of the circuit into a “Sleep” mode. Periodically the
device is “Awakened” by this internal logic and the
magnetic flux from the Hall element is evaluated
against the predefined thresholds. If the flux density
is above or below the Bop/Brp thresholds then the
output transistor is driven to change states according-
ly. While in the “Sleep” cycle the output transistor is
latched in its previous state. The design has been op-
timized for service in applications requiring extended
operating lifetime in battery powered systems.
The output transistor of the SS247 will be latched on
(Bop) in the presence of a sufficiently strong South or
North magnetic field facing the marked side of the
package. The output will be latched off (Brp) in the
absence of a magnetic field.
Applications
− Solid state switch
− Handheld Wireless Handset Awake Switch
− Lid close sensor for battery powered devices
− Magnet proximity sensor for reed switch replacement in low duty cycle applications
1 V3.10 Nov 1, 2013
1 page  
SS247
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Operating Parameters: TA = 25°C, VDD=2.75VDC.
PARAMETER
Symbol
Operating Point
Bop
Release Point
Brp
Hysteresis
Bhys
Min
-
+/-5
-
Type
+/-35
+/-27
8
Max
+/-60
-
-
Units
Gs
Gs
Gs
ESD Protection
Human Body Model (HBM) tests according to: Mil. Std. 883F method 3015.7
Parameter
ESD Voltage
Symbol
VESD
Limit Values
Min Max
±4
Unit
kV
Notes
Performance Characteristics
5 V3.10 Nov 1, 2013
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SS247.PDF ] | |
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