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Número de pieza | CLY5 | |
Descripción | GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CLY5 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! GaAs FET
CLY 5
________________________________________________________________________________________________________
Datasheet
* Power amplifier for mobile phones
* For frequencies from 400 MHz to 2.5 GHz
* Wide operating voltage range: 2.7 to 6 V
* POUT at VD=3V, f=1.8GHz typ. 26.5 dBm
* High efficiency better 55 %
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
CLY 5
Marking
CLY 5
Ordering code
(taped)
Pin Configuration
12
34
Q62702-L90 G S D S
Package 1)
SOT 223
Maximum ratings
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature
Pulse peak power
Total power dissipation (Ts < 80 °C)
Ts: Temperature at soldering point
Thermal Resistance
Channel-soldering point
Symbol
VDS
VDG
VGS
ID
TCh
Tstg
PPulse
Ptot
Values
9
12
-6
1.2
150
-55...+150
9
2
RthChS
≤35
1) Dimensions see chapter Package Outlines
Siemens Aktiengesellschaft
pg. 1/8
Unit
V
V
V
A
°C
°C
W
W
K/W
17.12.96
HL EH PD21
1 page GaAs FET
CLY 5
________________________________________________________________________________________________________
typ. Common Source S-Parameters
VDS = 5 V ID = 350 mA Zo = 50 Ω
f S11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
0.1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.2
1.4
1.5
1.6
1.8
2
2.2
2.4
2.5
3
3.5
4
4.5
5
5.5
6
0.98
0.95
0.92
0.89
0.86
0.8
0.76
0.72
0.7
0.69
0.68
0.68
0.68
0.7
0.71
0.72
0.75
0.77
0.8
0.82
0.83
0.87
0.89
0.91
0.92
0.93
0.93
0.93
-26.3
-38.8
-50.8
-62.1
-72.6
-91.7
-108.3
-122.9
-135.9
-147.6
-158.1
-167.7
175.3
160.4
153.6
147.1
135
123.9
113.7
104.3
99.7
80.1
64.4
51.5
39.6
28.8
18.1
8
13.02
12.58
11.98
11.34
10.68
9.39
8.24
7.27
6.45
5.77
5.2
4.7
3.92
3.31
3.06
2.83
2.43
2.1
1.82
1.58
1.47
1.02
0.74
0.56
0.45
0.37
0.31
0.27
160.1 0.00906
150.7 0.01326
141.9 0.01702
133.7 0.02026
126.1 0.02304
112.4 0.02771
100.6 0.03151
90.2 0.0348
80.9 0.03798
72.4 0.04099
64.5 0.04435
57 0.04784
43 0.05543
30.1 0.06413
24 0.06865
17.9 0.07318
6.2 0.08237
-5 0.09121
-15.6 0.09917
-25.7 0.10617
-30.4 0.10916
-51.4 0.12055
-67.4 0.12631
-79.4 0.13053
-90.2 0.13384
-100 0.13894
-109.2 0.1434
-117.1 0.14538
79.1
73.7
69.3
65.6
61.8
57
53.4
51.2
49.7
48.8
47.9
47.1
45.2
42.2
40.6
38.5
33.7
28.3
22.5
16.7
13.6
-0.8
-13.4
-24.5
-35
-45.2
-55.5
-65.6
0.15
0.17
0.2
0.23
0.26
0.29
0.33
0.35
0.37
0.4
0.41
0.44
0.47
0.51
0.54
0.55
0.6
0.64
0.67
0.7
0.72
0.78
0.83
0.86
0.88
0.91
0.92
0.92
-153.9
-148.4
-148.5
-149.9
-150.6
-155.5
-159.4
-164.1
-167.6
-171.3
-174.9
-177.8
175.4
168.7
165.5
161.7
154.6
147.5
140.4
133.3
129.1
111.6
95.8
81.3
67.9
54.9
41.7
28
Additional S-Parameter available on CD
Siemens Aktiengesellschaft
pg. 5/8
17.12.96
HL EH PD21
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet CLY5.PDF ] |
Número de pieza | Descripción | Fabricantes |
CLY10 | GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) | Siemens Semiconductor Group |
CLY15 | GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) | Siemens Semiconductor Group |
CLY2 | GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) | Siemens Semiconductor Group |
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