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PDF MMBD4448HTA Data sheet ( Hoja de datos )
| Número de pieza | MMBD4448HTA | |
| Descripción | Plastic-Encapsulated Switching Diode | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
MMBD4448HT Series
Plastic-Encapsulated Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Fast switching speed
For General Purpose Switching Applications
High Conductance
MARKING
Product MMBD4448HT
Marking
A3
MMBD4448HTA
A6
MMBD4448HTC
A7
MMBD4448HTS
AB
Circuit
PACKAGE INFORMATION
Package
MPQ
SOT-523
3K
Leader Size
7 inch
SOT-523
A
L
3
Top View
CB
12
KE
1
3
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.5 1.7
1.45 1.75
0.75 0.85
0.7 0.9
0.9 1.1
0.15 0.25
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
- 0.1
0.55 REF.
0.1 0.2
-
0.5 TYP.
0.25 0.325
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameters
Symbol
Rating
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
VRM
VRRM
VRWM
100
80
80
DC Blocking Voltage
VR 80
RMS Reverse Voltage
VR(RMS)
57
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge
Current
t=1.0µs
t=1.0s
IFM
IO
IFSM
500
250
4.0
1.5
Power Dissipation
Thermal Resistance, Junction to Ambient
Storage Temperature
PD
RθJA
TSTG
150
833
-65~150
Unit
V
V
V
V
V
mA
mA
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameters
Symbol
Min.
Max.
Reverse Breakdown Voltage
Forward Voltage
Maximum DC Reverse Current at rated
DC blocking voltage
Capacitance between terminals
Maximum Reverse Recovery Time
VR
VF1
VF2
VF3
VF4
IR1
IR2
CT
TRR
80
0.62
-
-
-
-
-
-
0.72
0.855
1
1.25
0.1
25
3.5
4
Unit
V
V
V
V
V
µA
nA
pF
nS
Test Conditions
IR=2.5µA
IF=5mA
IF=10mA
IF=100mA
IF=150mA
VR=70V
VR=20V
VR=6V, f=1MHz
VR=6V, IF=5mA
http://www.SeCoSGmbH.com/
21-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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