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PDF BU508AT Data sheet ( Hoja de datos )
| Número de pieza | BU508AT | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
·High Power Dissipation-
: PD= 100W@TC= 25℃
APPLICATIONS
·Designed for use in large screen color deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0) 1500
V
VCEO
Collector-Emitter Voltage
700 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current- Continuous
8A
ICM Collector Current-Peak
15 A
IB Base Current- Continuous
4A
IBM Base Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
6A
100 W
150 ℃
-65~150 ℃
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.2 ℃/W
isc Product Specification
BU508AT
isc website：www.iscsemi.cn
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BU508AT.PDF ] | |
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