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PDF BT169 Data sheet ( Hoja de datos )
| Número de pieza | BT169 | |
| Descripción | Thyristors logic level | |
| Fabricantes | TGS | |
| Logotipo |  |
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TIGER ELECTRONIC CO.,LTD
Product specification
Thyristors logic level
BT169 series
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors ina plastic envelope, intended
foruse in general purpose switching and phase control applications.
These devices are intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate
trigger circuits.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
Symbol
Typ
BT169D BT169G
VVDRRRMM
400 600
IT(AV)
IT(RMS)
0.5
0.8
ITSM 8.0
Unit
V
A
A
A
Max. Operating Junction
Temperature
Tj
110 oC
Storage Temperature
Tstg
-45~150
oC
TO-92
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol
Repetitive peak off-state voltage
s
VVDRRRMM
Test Conditions
Min Typ Max Unit
BT169D BT169G
— 400 600 — V
Average on-state current
IT(AV) half sine wave; Tmb< 103 oC — 0.5 — A
RMS on-state current
IT(RMS) all conduction angles
—
0.8
—A
On-state voltage
VT IT=1.0 A
— 1.20 1.35 V
Holding current
IH VD =12 V; IGT = 0.5 mA
—
0.5
5 mA
Latching current
IL VD =12 V; IGT = 0.5 mA
—
0.6
6 mA
Gate trigger current
IGT VD =12 V; IT = 10 mA
—
15 200 uA
Gate trigger voltage
VGT VD =12 V; IT = 10 mA
—
0.5 0.8 V
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BT169.PDF ] | |
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