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Número de pieza | ES1DF | |
Descripción | Surface Mount Super Fast Rectifiers | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ES1DF (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! ES1DF - ES1JF
Taiwan Semiconductor
CREAT BY ART
1A, 200V - 600V Surface Mount Super Fast Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAF DATA
Case: SMAF
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 35 mg (approximately)
SMAF
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
ES1DF
ES1GF
Maximum repetitive peak reverse voltage
VRRM
200
400
Maximum RMS voltage
Maximum DC blocking voltage
VRMS
VDC
140
200
280
400
Maximum average forward rectified current
IF(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
Typical junction capacitance (Note 2)
TJ=25°C
TJ=125°C
Maximum reverse recovery time (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and applied VR=4.0 V
Note 3: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A
VF
IR
CJ
trr
RθJL
RθJA
TJ
TSTG
1.00
1.30
5
100
9
35
35
85
- 55 to +150
- 55 to +150
ES1JF
600
420
600
1.70
UNIT
V
V
V
A
A
V
μA
pF
ns
°C/W
°C
°C
Version: B1604
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet ES1DF.PDF ] |
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