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PDF 1SS419 Data sheet ( Hoja de datos )

Número de pieza 1SS419
Descripción Silicon Epitaxial Planar Type Diode
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! 1SS419 Hoja de datos, Descripción, Manual

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS419
High-Speed Switching Applications
1SS419
Unit: mm
Small package
Low forward voltage: VF (3) = 0.56 V (typ.)
Low reverse current: IR = 5 μA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
45 V sESC
Reverse voltage
VR 40 V
Maximum (peak) forward current IFM 200 mA
Average forward current
Surge current (10 ms)
Power dissipation
IO
IFSM
P*
100 mA
1A
100 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55~125
°C JEDEC
Operating temperature range
Topr
40~100
°C JEITA
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass-epoxy circuit board of 20 × 20 mm,
pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test Condition
IF = 1 mA
IF = 10 mA
IF = 50 mA
VR = 40 V
VR = 0, f = 1 MHz
Min Typ. Max Unit
0.28
0.36
0.56 0.62
V
― ― 5 μA
15 pF
Equivalent Circuit (Top View)
Marking
X
1 2007-11-01

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