|
|
PDF AP4578M Data sheet ( Hoja de datos )
| Número de pieza | AP4578M | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AP4578M (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
AP4578M
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Performance
D2
D2
D2
D1 D2
D1 D1
D1
Description
SSOO--88
G2
G2
S2
G1 S2
SS11 G1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
60V
64mΩ
4.5A
-60V
125mΩ
-3A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
60 -60
±20 ±20
4.5 -3
3.6 -2.4
20 -20
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
201122041
1 page  
N-Channel
12
10 I D = 4 A
V DS = 48 V
8
6
4
2
0
0 4 8 12 16 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1
T A =25 o C
0.1 Single Pulse
100us
1ms
10ms
100
0.01
0.1 1 10 100 1000
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
25
V DS =5V
20
T j =25 o C
15
T j =125 o C
10
5
0
0246
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
AP4578M
f=1.0MHz
1000
C iss
C100 oss
C rss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
0.1
0.01
Duty factor=0 5
02
01
0 05
0 02
0 01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak T = P x R + T
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 12. Gate Charge Waveform
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP4578M.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AP4578GD | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| AP4578GH | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| AP4578GH-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| AP4578GM-HF | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |