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Datasheet CM75TU Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1CM75TU-12FHIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES CM75TU-12F HIGH POWER SWITCHING USE CM75TU-12F ¡IC ..................................................................... 75A ¡VCES ............................................................ 600V ¡Insulated Type ¡6-elements in a pack APPLICATION General purpose inver
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
data
2CM75TU-12FTrench Gate Design Six IGBTMOD 75 Amperes/600 Volts

CM75TU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD™ 75 Amperes/600 Volts J S - NUTS (5 TYP) CM N K P K R T (4 TYP.) P GUP EUP GVP EVP GWP EWP L B E N L N L M Q TC MEASURING POINT TC MEASURING POINT GUN EUN GVN
Powerex Power Semiconductors
Powerex Power Semiconductors
igbt
3CM75TU-12HHIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES CM75TU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F G E H E H G E R S(4 - Mounting Holes) K L GuP EuP D GvP EvP GwP EwP GuN EuN GvN EvN u v w K J E 5 - M4 NUTS TAB#110 t=0.5 H E J H E N C TC Measured Point TC Measured Point M GwN EwN P Q Description: Mitsubishi IGB
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
data
4CM75TU-12HSix IGBTMOD 75 Amperes/600 Volts

CM75TU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD™ U-Series Module 75 Amperes/600 Volts A B F G E H E H G E R S 4 - Mounting Holes K L GuP EuP D GvP EvP GwP EwP GuN EuN GvN EvN u v w K J E 5 - M4 NUTS 0.110 - 0.5 Tab H E J H E N C TC Mea
Powerex Power Semiconductors
Powerex Power Semiconductors
igbt
5CM75TU-24FHIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES CM75TU-24F HIGH POWER SWITCHING USE CM75TU-24F ¡IC ..................................................................... 75A ¡VCES ......................................................... 1200V ¡Insulated Type ¡6-elements in a pack APPLICATION General purpose inverte
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
data
6CM75TU-24FTrench Gate Design Six IGBTMOD 75 Amperes/1200 Volts

CM75TU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD™ 75 Amperes/1200 Volts J S - NUTS (5 TYP) CM N P K K R T (4 TYP.) P GUP EUP GVP EVP GWP EWP L B E N L N L M Q TC MEASURING POINT TC MEASURING POINT GUN EUN GV
Powerex Power Semiconductors
Powerex Power Semiconductors
igbt
7CM75TU-24HHIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES CM75TU-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F G E H E H G E S K R 4 - Mounting Holes L GuP EuP GvP EvP D C GwP EwP GuN EuN GvN EvN TC Measured Point u v TC Measured M Point GwN EwN w N 5 - M5 NUTS E H J E J H E K TAB#110 t=0.5 P Q Description: Mitsubish
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
data
8CM75TU-24HSix IGBTMOD 75 Amperes/1200 Volts

CM75TU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD™ U-Series Module 75 Amperes/1200 Volts A B F E G H E H G E S K R 4 - Mounting Holes L GuP EuP GvP EvP D C GwP EwP GuN EuN GvN EvN TC Measured Point u v TC Measured M Point GwN EwN w
Powerex Power Semiconductors
Powerex Power Semiconductors
igbt
9CM75TU-34KASix IGBTMOD 75 Amperes/1700 Volts

CM75TU-34KA Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD™ KA-Series Module 75 Amperes/1700 Volts S - NUTS (5 TYP) K CM J K R T - (4 TYP.) TC Measuring Point N P P G VP E VP GWP EWP G UP E U P TC Measuring Point L B E N L N L M Q
Powerex Power Semiconductors
Powerex Power Semiconductors
igbt


CM7 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1CM7216(CM72xx) T-1 Wire Terminal

T-1 Wire Terminal (standard) & T-1 Sub-Midget Flange Base T-1 Wire Terminal (standard) .125 MAX . P art Number C M6151 C M6211 .250 MAX . Des ign V oltage 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10.0 12.0 14.0 14.0 18.0 28.0 A mps .060 .080 .115 .115 .125 .125 .125 .017 .045 .027
CML
CML
data
2CM72xx(CM72xx) T-1 Wire Terminal

T-1 Wire Terminal (standard) & T-1 Sub-Midget Flange Base T-1 Wire Terminal (standard) .125 MAX . P art Number C M6151 C M6211 .250 MAX . Des ign V oltage 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10.0 12.0 14.0 14.0 18.0 28.0 A mps .060 .080 .115 .115 .125 .125 .125 .017 .045 .027
CML
CML
data
3CM75BU-12HHIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES CM75BU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F E H E G R L S(4 - Mounting Holes) M GuP EuP D GvP EvP GuN EuN U V C TC Measured Point GvN EvN P TC Measured Point Q 4 - M4 NUTS J E J H K F G V T U N L TAB#110 t=0.5 V W X P Description: Mitsubishi IGBT
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
data
4CM75BU-12HFour IGBTMOD 75 Amperes/600 Volts

CM75BU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Four IGBTMOD™ U-Series Module 75 Amperes/600 Volts A B F E H E G R S 4 - Mounting Holes L M GuP EuP D GvP EvP GuN EuN U V C TC Measured Point GvN EvN P TC Measured Point Q 4 - M4 NUTS J E J H
Powerex Power Semiconductors
Powerex Power Semiconductors
igbt
5CM75DU-12FTrench Gate Design Dual IGBTMOD 75 Amperes/600 Volts

CM75DU-12F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 75 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1 E2 C1 F G B H G1E1 F M K K J R C L
Powerex Power Semiconductors
Powerex Power Semiconductors
igbt
6CM75DU-12FHIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES CM75DU-12F HIGH POWER SWITCHING USE CM75DU-12F ¡IC ..................................................................... 75A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION
Mitsubishi Electric
Mitsubishi Electric
data
7CM75DU-12HHIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES CM75DU-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point E F G E2 A B H J D C G1 E1 G2 G2 U C1 3-M5 Nuts O P O Q CM C2E1 K 2 - Mounting Holes (6.5 Dia.) V L M N TAB#110 t=0.5 P S R T E2 G2 Description: Mitsubishi IGBT Modules are designed for use in
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
data
8CM75DU-12HDual IGBTMOD 75 Amperes/600 Volts

CM75DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 75 Amperes/600 Volts TC Measured Point E F G E2 A B H J D C G1 E1 G2 G2 U C1 3-M5 Nuts O P O Q CM C2E1 K 2 - Mounting Holes (6.5 Dia.) V L M N 0.110 - 0.5 Tab P S
Powerex Power Semiconductors
Powerex Power Semiconductors
igbt
9CM75DU-24FTrench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts

CM75DU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 75 Amperes/1200 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1 E2 C1 F G H B G1E1 F M K K J R C L G2 E2 RTC C2E1 E2 RTC
Powerex Power Semiconductors
Powerex Power Semiconductors
igbt



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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