Datasheet CM75DU Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	CM75DU-12F	Trench Gate Design Dual IGBTMOD 75 Amperes/600 Volts CM75DU-12F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 75 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1 E2 C1 F G B H G1E1 F M K K J R C L	Powerex Power Semiconductors	igbt
2	CM75DU-12F	HIGH POWER SWITCHING USE MITSUBISHI IGBT MODULES CM75DU-12F HIGH POWER SWITCHING USE CM75DU-12F ¡IC ..................................................................... 75A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION	Mitsubishi Electric	data
3	CM75DU-12H	HIGH POWER SWITCHING USE INSULATED TYPE MITSUBISHI IGBT MODULES CM75DU-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point E F G E2 A B H J D C G1 E1 G2 G2 U C1 3-M5 Nuts O P O Q CM C2E1 K 2 - Mounting Holes (6.5 Dia.) V L M N TAB#110 t=0.5 P S R T E2 G2 Description: Mitsubishi IGBT Modules are designed for use in	Mitsubishi Electric Semiconductor	data
4	CM75DU-12H	Dual IGBTMOD 75 Amperes/600 Volts CM75DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 75 Amperes/600 Volts TC Measured Point E F G E2 A B H J D C G1 E1 G2 G2 U C1 3-M5 Nuts O P O Q CM C2E1 K 2 - Mounting Holes (6.5 Dia.) V L M N 0.110 - 0.5 Tab P S	Powerex Power Semiconductors	igbt
5	CM75DU-24F	Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts CM75DU-24F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 75 Amperes/1200 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1 E2 C1 F G H B G1E1 F M K K J R C L G2 E2 RTC C2E1 E2 RTC	Powerex Power Semiconductors	igbt

CM7 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	CM7216	(CM72xx) T-1 Wire Terminal T-1 Wire Terminal (standard) & T-1 Sub-Midget Flange Base T-1 Wire Terminal (standard) .125 MAX . P art Number C M6151 C M6211 .250 MAX . Des ign V oltage 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10.0 12.0 14.0 14.0 18.0 28.0 A mps .060 .080 .115 .115 .125 .125 .125 .017 .045 .027	CML	data
2	CM72xx	(CM72xx) T-1 Wire Terminal T-1 Wire Terminal (standard) & T-1 Sub-Midget Flange Base T-1 Wire Terminal (standard) .125 MAX . P art Number C M6151 C M6211 .250 MAX . Des ign V oltage 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10.0 12.0 14.0 14.0 18.0 28.0 A mps .060 .080 .115 .115 .125 .125 .125 .017 .045 .027	CML	data
3	CM75BU-12H	HIGH POWER SWITCHING USE INSULATED TYPE MITSUBISHI IGBT MODULES CM75BU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F E H E G R L S(4 - Mounting Holes) M GuP EuP D GvP EvP GuN EuN U V C TC Measured Point GvN EvN P TC Measured Point Q 4 - M4 NUTS J E J H K F G V T U N L TAB#110 t=0.5 V W X P Description: Mitsubishi IGBT	Mitsubishi Electric Semiconductor	data
4	CM75BU-12H	Four IGBTMOD 75 Amperes/600 Volts CM75BU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Four IGBTMOD™ U-Series Module 75 Amperes/600 Volts A B F E H E G R S 4 - Mounting Holes L M GuP EuP D GvP EvP GuN EuN U V C TC Measured Point GvN EvN P TC Measured Point Q 4 - M4 NUTS J E J H	Powerex Power Semiconductors	igbt
5	CM75DU-12F	Trench Gate Design Dual IGBTMOD 75 Amperes/600 Volts CM75DU-12F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 75 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1 E2 C1 F G B H G1E1 F M K K J R C L	Powerex Power Semiconductors	igbt
6	CM75DU-12F	HIGH POWER SWITCHING USE MITSUBISHI IGBT MODULES CM75DU-12F HIGH POWER SWITCHING USE CM75DU-12F ¡IC ..................................................................... 75A ¡VCES ............................................................ 600V ¡Insulated Type ¡2-elements in a pack APPLICATION	Mitsubishi Electric	data
7	CM75DU-12H	HIGH POWER SWITCHING USE INSULATED TYPE MITSUBISHI IGBT MODULES CM75DU-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point E F G E2 A B H J D C G1 E1 G2 G2 U C1 3-M5 Nuts O P O Q CM C2E1 K 2 - Mounting Holes (6.5 Dia.) V L M N TAB#110 t=0.5 P S R T E2 G2 Description: Mitsubishi IGBT Modules are designed for use in	Mitsubishi Electric Semiconductor	data

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Número de pieza	Descripción	Fabricantes	PDF
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