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PDF AP562 Data sheet ( Hoja de datos )
| Número de pieza | AP562 | |
| Descripción | WiMAX 8W Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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AP562
3.3-3.8 GHz WiMAX 8W Power Amplifier
Product Features
Product Description
Functional Diagram
• 3.3 – 3.8 GHz
• +39.4 dBm P1dB
• 11.5 dB Gain
• 2.0% EVM @ 30 dBm Pout
The AP562 is a high dynamic range broadband power
amplifier in a surface mount package. The single-stage
amplifier has 11.5 dB gain, while being able to achieve
high performance for 3.3–3.8 GHz WiMAX applications
with up to 39.4 dBm of compressed 1dB power.
• +12 V Supply Voltage
The AP562 uses a high reliability +12V InGaP/GaAs HBT
•
Lead-free/green/RoHS-compliant
5x6 mm power DFN package
process technology. The device incorporates proprietary
bias circuitry to compensate for variations in linearity and
current draw over temperature. The device does not require
any negative bias voltage; an internal active bias allows the
Applications
AP562 to operate directly off a commonly used +12V
supply and has the added feature of a +5V power down
• WiMAX CPE/BTS
control pin. RoHS-compliant 5x6mm DFN package is
surface mountable to allow for low manufacturing costs to
the end user.
The AP562 is targeted for use in a balanced or single ended
configuration for WiMAX applications where high linearity
and high power is required.
Function
RFIN
RFOUT
IREF
VBIAS
NC
Pin No.
4,5,6
9,10,11
14
1
2,3,7,8,12,13
Specifications
Parameter
Operational Bandwidth
Test Frequency
Output Channel Power
Power Gain
Input Return Loss
Output Return Loss
Error Vector Magnitude
Operating Current, Icc
RF Switching Speed
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd(4)
Vcc
Units
GHz
GHz
dBm
dB
dB
dB
%
mA
ns
%
dBm
mA
V
V
Min
3.3
Typ
3.5
+30
11.5
15
6.7
1.9
685
50
11.7
39.4
400
+5
+12
Max
3.8
Notes:
1. Test conditions unless otherwise noted: T = 25ºC, Vpd = +5V, Vcc = +12, Icq = 400mA at Pout = +30
dBm and f = 3.5 GHz.
2. Using an 802.16-2004 OFDMA, 64QAM-1/2,1024-FFT, 20 symbols, 30 subchannels signal, 9.5 dB
PAR @ 0.01%.
3. Switching speed: 50% TTL to 100/0% RF.
4. Vpd used for device power down. (low=RF off)
5. Capable of handling 10:1 VSWR @ 12 VDC, WiMax signal, PoutAVG = 30dBm.
Typical Performance
Parameter
Test Frequency
Channel Power
Power Gain
Input Return Loss
Output Return Loss
Error Vector Magnitude
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd
Vcc
Units
GHz
dBm
dB
dB
dB
%
mA
%
dBm
mA
V
V
Typical
3.4 3.5 3.6
+30 +30 +30
11.5 11.5 11.3
11 15 15
5.6 6.7 5.9
2.2 1.9 1.7
720 685 670
11.1 11.7 12.2
39.5 39.4 38.7
400
+5
+12
Absolute Maximum Rating
Parameter
Pin max (CW into 50Ω load)
Storage Temperature
Max Junction Temperature, TJ,max
Thermal Resistance, ΘJC
Rating
+33 dBm
-55 to +125 ºC
158 ºC
8.4 °C / W
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
AP562-F
WiMAX 12V 8W HBT Amplifier
AP562-PCB3500 3.4-3.6 GHz Fully Assembled Evaluation Board
Standard T/R size = 500 pieces on a 7” reel.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 1 of 8 May 2009
1 page  
AP562
3.3-3.8 GHz WiMAX 8W Power Amplifier
Current vs Output Average Power vs Temperature
800
f=3.5 GHz
750
700
650
600
550
500
450
+25ºC -40ºC +85ºC
400
20 22 24 26 28 30 32
Output Power (dBm)
Efficiency vs Output Average Power vs Temperature
f=3.5 GHz
25
20
15
10
5
+25ºC -40ºC +85ºC
0
20 22 24 26 28 30 32
Output Power (dBm)
EVM vs. Output Average Power vs Temperature
f=3.5 GHz
5
4
3
2
1
+25ºC -40ºC +85ºC
0
20 22 24 26 28 30 32
Output Power (dBm)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: [email protected] • Web site: www.TriQuint.com
Page 5 of 8 May 2009
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP562.PDF ] | |
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