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Datasheet FJP2145 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FJP2145 | NPN Power Transistor FJP2145 — ESBC™ Rated NPN Power Transistor
March 2015
FJP2145 ESBC™ Rated NPN Power Transistor
ESBC Features (FDC655 MOSFET)
VCS(ON) 0.21 V
IC Equiv. RCS(ON)(1) 2 A 0.105 Ω
• Low Equivalent On Resistance • Very Fast Switch: 150 kHz • Wide RBSOA: Up to 1100 V • Avalanche Rated � |  Fairchild Semiconductor | transistor |
FJP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FJP13007 | High Voltage Switch Mode Application FJP13007
FJP13007
High Voltage Switch Mode Application
• High Speed Switching • Suitable for Switching Regulator and Motor Control
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Fairchild Semiconductor data | | |
| 2 | FJP13009 | High Voltage Switch Mode Application FJP13009
FJP13009
High Voltage Switch Mode Application
• High Speed Switching • Suitable for Switching Regulator and Motor Control
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Fairchild Semiconductor data | | |
| 3 | FJP13009H2TU | High-Voltage Fast-Switching NPN Power Transistor FJP13009 — High Voltage Fast-Switching NPN Power Transistor
July 2013
FJP13009 High-Voltage Fast-Switching NPN Power Transistor
Features
• High-Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switched Mode Power Supply
1
TO-220 2.Collector 3.Emitter
1.Bas Fairchild Semiconductor transistor | | |
| 4 | FJP13009TU | High-Voltage Fast-Switching NPN Power Transistor FJP13009 — High Voltage Fast-Switching NPN Power Transistor
July 2013
FJP13009 High-Voltage Fast-Switching NPN Power Transistor
Features
• High-Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switched Mode Power Supply
1
TO-220 2.Collector 3.Emitter
1.Bas Fairchild Semiconductor transistor | | |
| 5 | FJP1943 | PNP Epitaxial Silicon Transistor FJP1943 — PNP Epitaxial Silicon Transistor
November 2008
FJP1943 PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier
Features
• • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 8 Fairchild Semiconductor transistor | | |
| 6 | FJP1943OTU | PNP Epitaxial Silicon Transistor FJP1943 — PNP Epitaxial Silicon Transistor
November 2008
FJP1943 PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier
Features
• • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 8 Fairchild Semiconductor transistor | | |
| 7 | FJP1943RTU | PNP Epitaxial Silicon Transistor FJP1943 — PNP Epitaxial Silicon Transistor
November 2008
FJP1943 PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier
Features
• • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 8 Fairchild Semiconductor transistor | | |
| 8 | FJP2145 | NPN Power Transistor FJP2145 — ESBC™ Rated NPN Power Transistor
March 2015
FJP2145 ESBC™ Rated NPN Power Transistor
ESBC Features (FDC655 MOSFET)
VCS(ON) 0.21 V
IC Equiv. RCS(ON)(1) 2 A 0.105 Ω
• Low Equivalent On Resistance • Very Fast Switch: 150 kHz • Wide RBSOA: Up to 1100 V • Avalanche Rated � Fairchild Semiconductor transistor | | |
| 9 | FJP2160D | NPN Silicon Transistor FJP2160D — ESBCTTMM Rated NPN Silicon Transistor
FJP2160D ESBCTM Rated NPN Silicon Transistor
May 2012
Applications
• High Voltage and High Speed Power Switch Application
• Emitter-Switched Bipolar/MOSFET Cascode Application (ESBCTM)
• Smart Meter, Smart Breakers, HV Industrial Power Supp Fairchild Semiconductor transistor | |
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