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Datasheet SVD101 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SVD101 | X Band VCO / PLO Ordering number : EN5766
Hyperabrupt Junction Type GaAs Varactor Diode
SVD101
X Band VCO, PLO
Features
• High Q. • High capacitance ratio.
Package Dimensions
unit: mm 1274
[SVD101]
1 : Cathode 2 : Anode
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Peak Reverse Voltage Aver |  Sanyo Semicon Device | data |
SVD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | SVD101 | X Band VCO / PLO Ordering number : EN5766
Hyperabrupt Junction Type GaAs Varactor Diode
SVD101
X Band VCO, PLO
Features
• High Q. • High capacitance ratio.
Package Dimensions
unit: mm 1274
[SVD101]
1 : Cathode 2 : Anode
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Peak Reverse Voltage Aver Sanyo Semicon Device  | ||
| 2 | SVD102 | X Band VCO / PLO Ordering number : EN5767
Hyperabrupt Junction Type GaAs Varactor Diode
SVD102
X Band VCO, PLO
Features
• High Q. • High capacitance ratio.
Package Dimensions
unit: mm 1274
[SVD102]
1 : Cathode 2 : Anode
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Peak Reverse Voltage Aver Sanyo Semicon Device | ||
| 3 | SVD10N60F | 600V N-CHANNEL MOSFET SVD10N60T/F_Datasheet
10A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
structure DMOS technology. The improved planar stripe
cell and the improved guard ring terminal hav  Silan Microelectronics | ||
| 4 | SVD10N60T | 600V N-CHANNEL MOSFET SVD10N60T/F_Datasheet
10A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
structure DMOS technology. The improved planar stripe
cell and the improved guard ring terminal hav Silan Microelectronics | ||
| 5 | SVD10N65F | 650V N-CHANNEL MOSFET SVD10N65T/F(G)_Datasheet
10A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
structure VDMOS technology. The improved
planar stripe cell and the improved guard ring termi Silan Microelectronics | ||
| 6 | SVD10N65FG | 650V N-CHANNEL MOSFET SVD10N65T/F(G)_Datasheet
10A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
structure VDMOS technology. The improved
planar stripe cell and the improved guard ring termi Silan Microelectronics | ||
| 7 | SVD10N65T | 650V N-CHANNEL MOSFET SVD10N65T/F(G)_Datasheet
10A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
structure VDMOS technology. The improved
planar stripe cell and the improved guard ring termi Silan Microelectronics |
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