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Datasheet J109 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
7 | J109 | JFET GENERAL-PURPOSE TRANSISTOR MAXIMUM RATINGS
Rating Drain-Gate Voltage Gate-Source Voltage Gate Current Total Device Dissipation (a T/ = 25°C
Derate above 25°C Junction Temperature Range Storage Channel Temperature Range
Symbol VDG VGS
"G
PD
Tj Tstg
Value -25 -25
10 310 2.82 135
-65 to +150
Unit Vdc Vdc
mAdc
mW
mW/°C
°C
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Motorola Semiconductors |
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6 | J109 | N-Channel JFETs J/SST108 Series
Vishay Siliconix
N–Channel JFETs
J108 J109 J110
PRODUCT SUMMARY
Part Number
J/SST108 J/SST109 J/SST110
VGS(off) (V)
–3 to –10 –2 to –6 –0.5 to –4
rDS(on) Max (W)
8 12 18
ID(off) Typ (pA)
20 20 20
tON Typ (ns)
4 4 4
SST108 SST109 SST110
FEATURES
D Low On-Resist |
Vishay |
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5 | J109 | N-channel silicon junction FETs DISCRETE SEMICONDUCTORS
DATA SHEET
J108; J109; J110 N-channel silicon junction FETs
Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30
Philips Semiconductors
Product specification
N-channel silicon junction FETs
FEATURES • High speed swi |
NXP Semiconductors |
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4 | J109 | N-Channel Switch J109 / MMBFJ108 — N-Channel Switch
January 2015
J109 / MMBFJ108 N-Channel Switch
Features
• This device is designed for digital switching applications where very low on resistance is mandatory.
• Sourced from process 58
1 TO-92 1. Drain 2. Source 3. Gate
Figure 1. J109 Device Package
Orde |
Fairchild Semiconductor |
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