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Datasheet D1004 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 17 | D1004 | METAL GATE RF SILICON FET TetraFET
D1004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C D (2 pls) E
B
1
2
3
A
G
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
H I
F
M
K
J
N
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss |
 Seme LAB |
 |
| 16 | D10040180GT | GaAs Power Doubler
Product Specification
D10040180GT
GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC
FEATURES
• • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally stable |
 PDI |
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| 15 | D10040180GTH | GaAs Power Doubler
Product Specification
D10040180GTH
GaAs Power Doubler, 40 – 1000MHz, 19.0dB min. Gain @ 1GHz, 440mA max. @ 24VDC
FEATURES
• • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditionally s |
PDI |
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| 14 | D10040200GT | Product Specification
Product Specification
D10040200GT
GaAs Power Doubler, 40 – 1000MHz, 20.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC
FEATURES
• • • • • • •
•
Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Unconditiona |
PDI |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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