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PDF 60EPU12 Data sheet ( Hoja de datos )

Número de pieza 60EPU12
Descripción Ultrafast Soft Recovery Diode
Fabricantes nELL 
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No Preview Available ! 60EPU12 Hoja de datos, Descripción, Manual

SEMICONDUCTOR
60EPU12 Series RRooHHSS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode
60A / 1200V
FEATURES
Ultrafast recovery
150 °C operating junction temperature
Designed and qualified for industrial level
Planar FRED Chip
BENEFITS
Reduced RFI and EMI
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION/APPLICATIONS
Anti-parallel diode for switching mode power
supply and inverters.
Free wheeling diode for motor controllers
and inverters.
Snubber diode
Uninterruptible power supply (UPS)
HF welder
Induction heating
High speed rectifiers
60EPU12
60APU12
Cathode
to base
2
Cathode
to base
2
1
Cathode
3
Anode
TO-247AC modified
PRODUCT SUMMARY
trr
IF(AV)
VR
1
Anode
3
Anode
TO-247AB
45 ns
60 A
1200 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage temperatures
SYMBOL
VR
lF(AV)
lFSM
lFRM
Tj, TStg
TEST CONDITIONS
TC = 60 °C
TC = 25 °C
Square wave, 20 kHz
VALUES
1200
60
570
100
- 55 to 150
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(TJ = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
Breakdown voltage,
blocking voltage
VR lR = 100µA
1200
-
Forward voltage
Reverse leakage current
Junction capacitance
lF = 60A
VF lF = 120A
lF = 60A, TJ = 125°C
lR VR = VR rated
TJ = 150°C, VR = VR rated
CT VR = 200V
- 2.1
--
--
- 1.0
--
- 37
Series inductance
LS
Measure lead to lead 5mm from
package body
- 10
MAX.
-
2.3
3.0
2.0
10
500
-
-
UNITS
V
µA
pF
nH
www.nellsemi.com
Page 1 of 6

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60EPU12 pdf
SEMICONDUCTOR
60EPU12 Series RRooHHSS
Nell High Power Products
Fig.9 Reverse recovery parameter test circuit
Fig.10 Reverse recovery waveform and definitions
www.nellsemi.com
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