DataSheet.es S-1004 Hoja de datos PDF



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VOLTAGE DETECTOR - Seiko Instruments

Número de pieza S-1004
Descripción VOLTAGE DETECTOR
Fabricantes Seiko Instruments 
Logotipo Seiko Instruments Logotipo
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S-1004 datasheet

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S-1004 pdf
BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN
Rev.2.1_00
S-1004 Series
4. 2 S-1004 Series NB type
Output form: Nch open-drain output (Active "L")
Table 4
Detection Voltage
1.0 V ± 22 mV
1.1 V ± 22 mV
1.2 V ± 22 mV
1.3 V ± 22 mV
1.4 V ± 22 mV
1.5 V ± 22 mV
1.6 V ± 22 mV
1.7 V ± 22 mV
1.8 V ± 22 mV
1.9 V ± 22 mV
2.0 V ± 22 mV
2.1 V ± 22 mV
2.2 V ± 1.0%
2.3 V ± 1.0%
2.4 V ± 1.0%
2.5 V ± 1.0%
2.6 V ± 1.0%
2.7 V ± 1.0%
2.8 V ± 1.0%
2.9 V ± 1.0%
3.0 V ± 1.0%
3.1 V ± 1.0%
3.2 V ± 1.0%
3.3 V ± 1.0%
3.4 V ± 1.0%
3.5 V ± 1.0%
3.6 V ± 1.0%
3.7 V ± 1.0%
3.8 V ± 1.0%
3.9 V ± 1.0%
4.0 V ± 1.0%
4.1 V ± 1.0%
4.2 V ± 1.0%
4.3 V ± 1.0%
4.4 V ± 1.0%
4.5 V ± 1.0%
4.6 V ± 1.0%
4.7 V ± 1.0%
4.8 V ± 1.0%
4.9 V ± 1.0%
5.0 V ± 1.0%
SOT-23-5
S-1004NB10I-M5T1U
S-1004NB11I-M5T1U
S-1004NB12I-M5T1U
S-1004NB13I-M5T1U
S-1004NB14I-M5T1U
S-1004NB15I-M5T1U
S-1004NB16I-M5T1U
S-1004NB17I-M5T1U
S-1004NB18I-M5T1U
S-1004NB19I-M5T1U
S-1004NB20I-M5T1U
S-1004NB21I-M5T1U
S-1004NB22I-M5T1U
S-1004NB23I-M5T1U
S-1004NB24I-M5T1U
S-1004NB25I-M5T1U
S-1004NB26I-M5T1U
S-1004NB27I-M5T1U
S-1004NB28I-M5T1U
S-1004NB29I-M5T1U
S-1004NB30I-M5T1U
S-1004NB31I-M5T1U
S-1004NB32I-M5T1U
S-1004NB33I-M5T1U
S-1004NB34I-M5T1U
S-1004NB35I-M5T1U
S-1004NB36I-M5T1U
S-1004NB37I-M5T1U
S-1004NB38I-M5T1U
S-1004NB39I-M5T1U
S-1004NB40I-M5T1U
S-1004NB41I-M5T1U
S-1004NB42I-M5T1U
S-1004NB43I-M5T1U
S-1004NB44I-M5T1U
S-1004NB45I-M5T1U
S-1004NB46I-M5T1U
S-1004NB47I-M5T1U
S-1004NB48I-M5T1U
S-1004NB49I-M5T1U
S-1004NB50I-M5T1U
Seiko Instruments Inc.
5

5 Page

S-1004 arduino
BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR WITH SENSE PIN
S-1004 Series
Rev.2.1_00
Electrical Characteristics
1. Nch open-drain output product
Table 11
(Ta = +25°C unless otherwise specified)
Item Symbol
Condition
Min.
Typ.
Max.
Unit
Test
Circuit
Detection voltage*1 VDET
0.95 V VDD 10.0 V
1.0 V ≤ −VDET(S) < 2.2 V
2.2 V ≤ −VDET(S) 5.0 V
VDET(S)
0.022
VDET(S)
× 0.99
VDET(S)
VDET(S)
VDET(S)
+ 0.022
VDET(S)
× 1.01
V
V
Hysteresis width VHYS
VDET VDET VDET
× 0.03 × 0.05 × 0.07
V
Current
consumption*2
ISS
VDD = 10.0 V, VSENSE = VDET(S) + 1.0 V
0.50 0.90 μA
Operation voltage VDD
0.95 10.0 V
Output transistor
VDD = 0.95 V
0.59 1.00 mA
Output current
IOUT
Nch
VDS*3 = 0.5 V
VSENSE = 0.0 V
VDD = 1.2 V
VDD = 2.4 V
VDD = 4.8 V
0.73 1.33 mA
1.47 2.39 mA
1.86 2.50 mA
Output transistor
Leakage current ILEAK
Nch
VDD = 10.0 V, VDS*3 = 10.0 V, VSENSE = 10.0 V
0.08 μA
Detection voltage
temperature
coefficient*4
Δ−VDET
ΔTa • −VDET
Ta
=
40°C
to
+85°C
− ±100 ±350 ppm/°C
1
1
1
2
1
3
3
3
3
3
1
Detection
delay time*5
Release
delay time*6
tDET
tRESET
VDD = 5.0 V
VDD = VDET(S) + 1.0 V, CD = 4.7 nF
40
10.79 12.69 14.59
μs
ms
4
4
SENSE pin
resistance
RSENSE
1.0 V ≤ −VDET(S) < 1.2 V
1.2 V ≤ −VDET(S) 5.0 V
5.0 19.0 42.0 MΩ 2
6.0 30.0 98.0 MΩ 2
*1. VDET: Actual detection voltage value, VDET(S): Set detection voltage value (the center value of the detection voltage
range in Table 3 or Table 4)
*2. The current flowing through the SENSE pin resistance is not included.
*3. VDS: Drain-to-source voltage of the output transistor
*4. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ−VDET
ΔTa
[mV/°C]*1 = VDET(S) (typ.)[V]*2 ×
Δ−VDET
ΔTa • −VDET
[ppm/°C]*3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Set detection voltage
*3. Detection voltage temperature coefficient
*5. The time period from when the pulse voltage of 6.0 V → −VDET(S) 2.0 V or 0 V is applied to the SENSE pin to when
VOUT reaches VDD / 2, after the output pin is pulled up to 5.0 V by the resistance of 470 kΩ.
*6. The time period from when the pulse voltage of 0.95 V 10.0 V is applied to the SENSE pin to when VOUT reaches
VDD × 90%, after the output pin is pulled up to VDD by the resistance of 100 kΩ.
10 Seiko Instruments Inc.

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