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WPM2045
800
700
600
500
400
300
200
100
0
0
VGS=0V
f=1MHz
Ciss
Crss
Coss
2468
-VDS-Drain to Source Voltage(V)
10
10
T=25C
T=125C
8
6
4
2
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V - Source to Drain Voltage (V)
SD
Capacitor
50
45
40
35
30
25
20
15
10
5
0
1E-4 1E-3 0.01 0.1 1
T =150°C
J(Max)
TA=25°C
10 100 1000
Pulse width (S)
Single pulse power (Junction-to-ambient)
Body diode forward voltage
100
10 Limit by Rdson*
100us
1
10S
1ms
10ms
100ms
0.1
TA=25C
Single Pulse
DC 1S
Bvdss Limit
0.01
0.1
1 10
-VDS- Drain Source Voltage (V)
100
* VGS> minimum VGS at which RDS(on) is specified
Safe operating power
5
VDD=-10V
I =-2.8A
4D
3
2
1
0
0 2 4 6 8 10
Qg(nC)
Gate charge Characteristics
Will Semiconductor Ltd. 5 Aug, 2013 - Rev.1.0

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