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PDF WPM2037 Data sheet ( Hoja de datos )

Número de pieza WPM2037
Descripción Single P-Channel Power MOSFET
Fabricantes WillSEMI 
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No Preview Available ! WPM2037 Hoja de datos, Descripción, Manual

WPM2037
Single P-Channel, -20V, -3.6A , Power MOSFET
VDS (V)
-20
Rds(on) (ȍ)
0.047@ VGS=̢4.5V
0.060@ VGS=̢2.5V
0.076@ VGS=̢1.8V
WPM2037
Http//:www.willsemi.com
Descriptions
The WPM2037 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WPM2037 is Pb-free.
SOT-23-6L
DD S
654
123
D DG
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-6L
Applications
Pin configuration (Top view)
6 54
2037
YYWW
12 3
2037
YY
WW
= Device Code
= Year
= Week
Marking
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Order information
Device
Package
Shipping
WPM2037-6/TR SOT-23-6L 3000/Reel&Tape
Will Semiconductor Ltd. 1 Dec,2011 - Rev.1.1

1 page




WPM2037 pdf
WPM2037
1750
1500
1250
1000
750
500
250
0
0
V =0V
GS
F=1MHz
Ciss
Coss
Crss
4 8 12 16
-V Drain-to-Source Voltage (V)
DS
20
Capacitance
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01
0.1 1 10
Pulse Width (s)
100 1000
1.5
1.2
0.9
T=150oC
T=25oC
0.6
0.3
0.2 0.3 0.4 0.5 0.6 0.7 0.8
-VSD-Source-to-Drain Voltage(V)
Body diode forward voltage
100
TJ(Max)=150°C, TA=25°C
RDS(ON)
limited
10
100Ps
1
0.1
0.1
DC
10s
1 10
-VDS (Volts)
1ms
10ms
100m
1s
100
Single pulse power
Safe operating area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10ï4
Single Pulse
10ï3
10ï2
10ï1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 112_C/W
3. TJM ï TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Transient thermal response (Junction-to-Ambient)
Will Semiconductor Ltd.
5
Dec,2011 - Rev.1.1

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