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WPM2009D Hoja de datos en formato PDF ( Datasheet )

WPM2009D Función - P-MOSFET - WillSEMI

Número de pieza WPM2009D
Descripción P-MOSFET
Fabricantes WillSEMI 
Logotipo WillSEMI Logotipo
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WPM2009D Hoja de datos, Descripción, Manual
WPM2009D
-20V, -4A, 42mŸ, 2.0W, DFN3x3, P-MOSFET
Descriptions
This single P-Channel MOSFET is produced
using trench process that provides minimum on
resistance performance. WPM2009D is
enhancement power MOSFET with 2.0W power
dissipation mounting 1 in2 pad in a DFN3x3
package. This device is suited for high power
charging circuit of mobile phone application. It
also can be used in a high power switching
application.
WPM2009D
Http://www.willsemi.com
Bottom
DFN3x3-8L
Bottom
Features
z Max Rds(on) 42mŸ @ Vgs=-4.5V
z Max Vds
-20V
z Max Current
-4.0A
z Typical Vgs(th) -0.65V @ Id=-250uA
z Power Dissipation 2.0W (Note2)
z High performance Trench process
z DFN3x3-8L Package
z Pb-Free
Applications
z Battery charging
z Load Switch
z Power Switch
z DC-DC converter
Pin Connection
Top
WPM2009 = Part Number
YY = Year
WW = Week
Marking
Order Information
Device
Package
Shipping
WPM2009D-8/TR DFN3x3-8L 3000/Tape&Reel
Will Semiconductor Ltd.
1
Jan,2012 - Rev. 1.4





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WPM2009D Datasheet ( Hojas de datos )


Hoja de datos destacado

Número de piezaDescripciónFabricantes
WPM2009DP-MOSFETWillSEMI
WillSEMI



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