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WPM2005B Función - Power MOSFET and Schottky Diode - WillSEMI

Número de pieza WPM2005B
Descripción Power MOSFET and Schottky Diode
Fabricantes WillSEMI 
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WPM2005B Hoja de datos, Descripción, Manual
WPM2005B
Power MOSFET and Schottky Diode
Features
z Featuring a MOSFET and Schottky Diode
z Independent Pinout to each Device to Ease Circuit Design
z Ultra Low VF Schottky
Applications
z Li--Ion Battery Charging
z High Side DC-DC Conversion Circuits
z High Side Drive for Small Brushless DC Motors
z Power Management in Portable, Battery Powered Products
WPM2005B
DFN3×2-8L
MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted)
Parameter
Symbol
Value
Units
Drain-Source voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient
VDSS
VGS
ID
IDM
PD
TJ
Tstg
RԦJA
-20
f8
-2.7
-10
1.1
150
-55~150
110
V
V
A
A
W
ć
ć
ć/W
SCHOTTKY DIODE MAXIMUM RATINGS(TJ = 25ć unless otherwise noted)
Parameter
Symbol
Limits
Unit
Peak repetitive reverse voltage
.
DC Blocking voltage
Average rectified forward current
VRRM
VR
IF
20
20
1
V
V
A
pin connections:
1
A
2
A
S
3
G
4
8
C
7
C
6
D
D
5
Marking:
J = Specific Device Code
A = Date Code
Order information
PartNumber
WPM2005BͲ8/TR
Package
DFN3*2- 8L 
Shipping 
3000Tape&Reel
http://www.willsemi.com
Page 1
9/8/2009 Rev1.2





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Número de piezaDescripciónFabricantes
WPM2005Power MOSFET and Schottky DiodeWillSEMI
WillSEMI
WPM2005BPower MOSFET and Schottky DiodeWillSEMI
WillSEMI

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