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WPM2005 Hoja de datos en formato PDF ( Datasheet )

WPM2005 Función - Power MOSFET and Schottky Diode - WillSEMI

Número de pieza WPM2005
Descripción Power MOSFET and Schottky Diode
Fabricantes WillSEMI 
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WPM2005 Hoja de datos, Descripción, Manual
WPM2005
WPM2005
Power MOSFET and Schottky Diode
Features
z Featuring a MOSFET and Schottky Diode
z Independent Pinout to each Device to Ease Circuit Design
z Ultra Low VF Schottky
Applications
z Li--Ion Battery Charging
z High Side DC-DC Conversion Circuits
z High Side Drive for Small Brushless DC Motors
z Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted)
Parameter
DrainïtoïSource Voltage
GateïtoïSource Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t5s
Steady
State
t5s
TJ = 25°C
TJ = 85°C
TJ = 25°C
TJ = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
PD
IDM
TJ, TSTG
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS
TL
Value
ï20
±8.0
ï2.9
ï1.8
ï3.7
1.4
2.2
ï13
ï55 to
150
1.7
260
Units
V
V
A
W
A
°C
A
°C
DFN3×2-8L
D
1
C
8
pin connections:
1
A
2
A
S
3
G
4
8
C
7
C
6
D
D
5
Marking:
1. Surface Mounted on FR4 Board using 1 in sq pad size, 1oz Cu.
SCHOTTKY DIODE MAXIMUM RATINGS(TJ = 25ć unless otherwise noted)
Parameter
Symbol
Limits
Unit
J = Specific Device Code
A = Date Code
Peak repetitive reverse voltage
.
DC Blocking voltage
Average rectified forward current
Order information
PartNumber
WPM2005Ͳ8/TR
VRRM
VR
IF
20
20
1
Package
DFN3*2- 8L 
V
V
A
Shipping 
3000Tape&Reel
http://www.willsemi.com
Page 1
12/8/2009 Rev3.3





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WPM2005 Datasheet ( Hojas de datos )


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