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PDF ZXMP6A17N8 Data sheet ( Hoja de datos )

Número de pieza ZXMP6A17N8
Descripción 60V P-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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A Product Line of
Diodes Incorporated
ZXMP6A17N8
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-60V
RDS(on)
125mΩ @ VGS = -10V
190mΩ @ VGS = -4.5V
ID
TA = 25°C
-3.4A
-2.8A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Motor control
Backlighting
DC-DC Converters
Power management functions
Features and Benefits
Fast switching speed
Low input capacitance
“Green” component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
D
G
Top View
Top View
S
Equivalent Circuit
Ordering Information (Note 1)
Product
ZXMP6A17N8TC
Marking
See below
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
Notes:
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMP
6A17
YYWW
ZXMP = Product Type Marking Code, Line 1
6A17 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
1 of 8
www.diodes.com
March 2010
© Diodes Incorporated

1 page




ZXMP6A17N8 pdf
Typical Characteristics
A Product Line of
Diodes Incorporated
ZXMP6A17N8
T = 25°C
10
1
10V 5V
4V
3.5V
3V
2.5V
0.1 2V
-V
GS
0.01
0.1 1 10
-V Drain-Source Voltage (V)
DS
Output Characteristics
10
T = 150°C
1
T = 25°C
0.1
-V = 10V
DS
123
-V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
4
T = 150°C
10
1
0.1
10V 5V
4.5V
3.5V
3V
2.5V
2V
-V
GS
1.5V
0.01
0.1 1 10
-V Drain-Source Voltage (V)
DS
Output Characteristics
1.8
V = -10V
GS
1.6 I = - 2.3A
D
R
1.4
DS(on)
1.2
1.0
0.8
0.6
-50
V =V
GS DS
I = -250uA
D
V
GS(th)
0 50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
100 2V
10
1
2.5V
-V
GS
3V
3.5V
4V
5V
0.1 10V
T = 25°C
0.01
0.1 1 10
-I Drain Current (A)
On-ResistDance v Drain Current
10
T = 150°C
1
T = 25°C
0.1
V = 0V
GS
0.01
0.2 0.4 0.6 0.8 1.0 1.2
-V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
5 of 8
www.diodes.com
March 2010
© Diodes Incorporated

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