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PDF ZXMP4A57E6 Data sheet ( Hoja de datos )

Número de pieza ZXMP4A57E6
Descripción 40V P-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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Product Summary
V(BR)DSS
-40V
RDS(ON) max
80mΩ @ VGS= -10V
150mΩ @ VGS= -4.5V
ID max
TA = +25°C
-3.7 A
-2.8 A
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Applications
Motor Control
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
ZXMP4A57E6
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Fast Switching Speed
Low Gate Drive
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT26
Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight 0.018 grams (Approximate)
SOT26
D
G
Top View
Top View
Pin-Out
S
Equivalent Circuit
Ordering Information (Notes 4 & 5)
Part Number
ZXMP4A57E6TA
ZXMP4A57E6QTA
Compliance
Standard
Automotive
Case
SOT26
SOT26
Quantity per reel
3,000
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
4A57
4A57 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
2015
C
2016
D
Month
Code
Jan Feb
12
ZXMP4A57E6
Document Number DS35238 Rev. 3 - 2
Mar
3
2017
E
2018
F
2019
G
2020
H
Apr May Jun
456
Jul Aug Sep
78
9
1 of 8
www.diodes.com
2021
I
2022
J
Oct Nov Dec
OND
February 2015
© Diodes Incorporated

1 page




ZXMP4A57E6 pdf
Typical Characteristics
ZXMP4A57E6
T = 25°C
10
1
10V 5V
4.5V
4V
3.5V
3V
0.1
2.5V
0.01
-V
GS
0.1 1 10
-V Drain-Source Voltage (V)
DS
Output Characteristics
10
T = 150°C
1
T = 25°C
V = -10V
DS
0.1
234
-V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
100 2.5V
10
1
-V
GS
3V
3.5V
4V
4.5V
5V
0.1 7V
T = 25°C
10V
0.01
0.01 0.1 1 10
-I Drain Current (A)
On-ResistDance v Drain Current
T = 150°C
10
1
10V 5V
4.5V
4V
3.5V
3V
2.5V
0.1
2V
-V
GS
0.01
0.1 1 10
-V Drain-Source Voltage (V)
DS
Output Characteristics
1.6
V = -10V
GS
1.4
I = - 4A
D
R
DS(on)
1.2
1.0
0.8
0.6
-50
V =V
GS DS
I = -250uA
D
V
GS(th)
0 50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
10
1 T = 150°C
0.1
T = 25°C
0.01
1E-3
V = 0V
GS
1E-4
0.2 0.4 0.6 0.8 1.0 1.2
-V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
ZXMP4A57E6
Document Number DS35238 Rev. 3 - 2
5 of 8
www.diodes.com
February 2015
© Diodes Incorporated

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