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PDF K10A60W Data sheet ( Hoja de datos )

Número de pieza K10A60W
Descripción TK10A60W
Fabricantes Toshiba Semiconductor 
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No Preview Available ! K10A60W Hoja de datos, Descripción, Manual

Preliminary
TK10A60W
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS )
TK10A60W
Switching Regulator Applications
Low drain-source on-resistance : RDS (ON) = 0.327
by used to Super Junction Structure : DTMOS
(typ.)
Easy to control Gate switching
Enhancement-mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)
3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
1.14 ± 0.15
Characteristics
Symbol
Drain-source voltage
Gate-source voltage
VDSS
VGSS
Drain current (Continuous) (Note 1)
ID
Drain current (Pulsed)
(Note 1)
Drain power dissipation (Tc = 25°C)
IDP
PD
Single pulse avalanche energy
(Note 2)
EAS
Avalanche current
Drain reverse current (Continuous)
(Note 1)
IAR
IDR
Drain reverse current (Pulsed) (Note 1) IDRP
Channel temperature
Tch
Storage temperature range
Tstg
Isolation voltage (t = 1.0s)
Mounting torque
VISO(RMS)
TOR
Rating
600
±30
9.7
38.8
30
69
4.9
9.7
38.8
150
-55 to 150
2000
0.6
Unit
V
V
A
A
W
mJ
A
A
A
°C
°C
V
Nm
0.69 ± 0.15
0.2 M A
2.54 2.54
123
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
4.17 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.0 mH, RG = 25 , IAR = 4.9 A
This transistor is an electrostatic-sensitive device. Handle with care.
Internal Connection
2
1
3
1 2012-03-26

1 page




K10A60W pdf
Preliminary
TK10A60W
rth – tw
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
Single pulse
0.001
10 µ
100 µ
1m
10 m
100 m
t
T
Duty = t/T
Rth(ch-c) = 4.17°C/W
1
Pulse width tw (s)
10
PD – Tc
40
30
20
10
0
0 40 80 120 160
Case temperature Tc (°C)
EAS – Tch
80
60
40
20
0
25 50
75 100 125 150
Channel temperature (initial) Tch (°C)
Safe operating area
100
ID max (pulse) * 1 ms *
ID max (continuous)
10
100 µs *
10 µs *
1 µs *
DC operation
1 Tc = 25°C
This area is limited by RDS(ON)
0.1
100 ns *
15 V
15 V
BVDSS
IAR
VDD
VDS
Waveform
12
RG = 25 , VDD = 90 V EAS = 2 L I AR
BVDSS
BVDSS VDD
0.01
* : Single pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
0.1 1
10
VDSS max
100
Drain-source voltage VDS (V)
1000
5
2012-03-26

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